Thomas Rueckes

Publication Activity (10 Years)

Years Active: 2010-2022
Publications (10 Years): 6

Top Topics

Carbon Nanotubes

Numerical Analysis

Finding Relevant

Top Venues

IEEE J. Solid State Circuits

Publications

James Farmer, Dmitry Veksler, E. Tang, Gennadi Bersuker, David Z. Gao, Al-Moatasem El-Sayed, Thomas Durrant, Alexander L. Shluger, Thomas Rueckes, Lee Cleveland, Harry Luan, Rahul Sen
Combining measurements and modeling/simulations analysis to assess carbon nanotube memory cell characteristics. IRPS (2022)
James Farmer, William Whitehead, Andrew Hall, Dmitry Veksler, Gennadi Bersuker, David Z. Gao, Al-Moatasem El-Sayed, Thomas Durrant, Alexander L. Shluger, Thomas Rueckes, Lee Cleveland, Harry Luan, Rahul Sen
Mitigating switching variability in carbon nanotube memristors. IRPS (2021)
Hitoshi. Saito, J. Watanabe, J. Seino, T. Tamura, N. Sashida, K. Hara, K. Kawabata, A. Fujii, J. Ohno, A. Nakakubo, M. Kojima, T. Shimoyama, H. Wada, Lee Cleveland, H. Luan, R. Sen, N. Leong, T. Gallagher, Thomas Rueckes
Development of 16 Mb NRAM Aiming for High Reliability, Small Cell Area, and High Switching Speed. IMW (2021)
Dmitry Veksler, Gennadi Bersuker, Adam W. Bushmaker, Maribeth Mason, P. R. Shrestha, K. P. Cheung, Jason P. Campbell, Thomas Rueckes, Lee Cleveland, Harry Luan, David C. Gilmer
) under circuitry-relevant operation conditions. IRPS (2020)
David C. Gilmer, Thomas Rueckes, Lee Cleveland, Darlene Viviani
NRAM status and prospects. ICICDT (2017)
Sheyang Ning, Tomoko Ogura Iwasaki, Shuhei Tanakamaru, Darlene Viviani, Henry Huang, Monte Manning, Thomas Rueckes, Ken Takeuchi
Reset-Check-Reverse-Flag Scheme on NRAM With 50% Bit Error Rate or 35% Parity Overhead and 16% Decoding Latency Reductions for Read-Intensive Storage Class Memory. IEEE J. Solid State Circuits 51 (8) (2016)
Glen Rosendale, Sohrab Kianian, Monte Manning, Darlene Hamilton, Henry Huang, Karl Robinson, Young Weon Kim, Thomas Rueckes
A 4 Megabit Carbon Nanotube-based nonvolatile memory (NRAM). ESSCIRC (2010)