Development of 16 Mb NRAM Aiming for High Reliability, Small Cell Area, and High Switching Speed.
Hitoshi. SaitoJ. WatanabeJ. SeinoT. TamuraN. SashidaK. HaraK. KawabataA. FujiiJ. OhnoA. NakakuboM. KojimaT. ShimoyamaH. WadaLee ClevelandH. LuanR. SenN. LeongT. GallagherThomas RueckesPublished in: IMW (2021)