Gerald Lucovsky

Publication Activity (10 Years)

Years Active: 1993-2008
Publications (10 Years): 0

Publications

S. Lee, J. P. Long, Gerald Lucovsky, J. L. Whitten, H. Seo, J. Lüning
interfaces by deposition onto plasma-nitrided passivated Ge substrates: Integration issues Ge gate stacks into advanced devices. Microelectron. Reliab. 48 (3) (2008)
Gerald Lucovsky, H. Seo, L. B. Fleming, M. D. Ulrich, J. Lüning, Patrick Lysaght, Gennadi Bersuker
Intrinsic bonding defects in transition metal elemental oxides. Microelectron. Reliab. 46 (9-11) (2006)
Gerald Lucovsky, J. G. Hong, C. C. Fulton, N. A. Stoute, Y. Zou, Robert J. Nemanich, D. E. Aspnes, H. Ade, D. G. Schlom
Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra. Microelectron. Reliab. 45 (5-6) (2005)
Gerald Lucovsky, James C. Phillips
Bond strain and defects at interfaces in high-k gate stacks. Microelectron. Reliab. 45 (5-6) (2005)
Yi-Mu Lee, Yider Wu, Gerald Lucovsky
Breakdown and reliability of p-MOS devices with stacked RPECVD oxide/nitride gate dielectric under constant voltage stress. Microelectron. Reliab. 44 (2) (2004)
Gerald Lucovsky
Electronic structure of transition metal/rare earth alternative high-K gate dielectrics: interfacial band alignments and intrinsic defects. Microelectron. Reliab. 43 (9-11) (2003)
Carlton M. Osburn, Indong Kim, Sungkee Han, Indranil De, Kam F. Yee, Shyam Gannavaram, Sung-Joo Lee, Chung-Ho Lee, Zhijiong J. Luo, Wenjuan Zhu, John R. Hauser, Dim-Lee Kwong, Gerald Lucovsky, T. P. Ma, Mehmet C. Öztürk
Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go? IBM J. Res. Dev. 46 (2-3) (2002)
Gerald Lucovsky, Gilbert B. Rayner, Robert S. Johnson
Chemical and physical limits on the performance of metal silicate high-k gate dielectrics. Microelectron. Reliab. 41 (7) (2001)
Gerald Lucovsky
Ultrathin nitrided gate dielectrics: Plasma processing, chemical characterization, performance, and reliability. IBM J. Res. Dev. 43 (3) (1999)
Nino A. Masnari, John R. Hauser, Gerald Lucovsky, Dennis M. Maher, Robert J. Markunas, Mehmet C. Bztork, Jimmie J. Wortman
Cener for advanced electronic materials processing. Proc. IEEE 81 (1) (1993)