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Breakdown and reliability of p-MOS devices with stacked RPECVD oxide/nitride gate dielectric under constant voltage stress.
Yi-Mu Lee
Yider Wu
Gerald Lucovsky
Published in:
Microelectron. Reliab. (2004)
Keyphrases
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leakage current
gate insulator
low voltage
electrical properties
silicon dioxide
gate dielectrics
power line
mobile devices
design considerations
floating gate
reliability analysis
cmos technology
power management
embedded systems
real time
smart phones
mobile applications
context aware
neural network