Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go?
Carlton M. OsburnIndong KimSungkee HanIndranil DeKam F. YeeShyam GannavaramSung-Joo LeeChung-Ho LeeZhijiong J. LuoWenjuan ZhuJohn R. HauserDim-Lee KwongGerald LucovskyT. P. MaMehmet C. ÖztürkPublished in: IBM J. Res. Dev. (2002)