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Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go?

Carlton M. OsburnIndong KimSungkee HanIndranil DeKam F. YeeShyam GannavaramSung-Joo LeeChung-Ho LeeZhijiong J. LuoWenjuan ZhuJohn R. HauserDim-Lee KwongGerald LucovskyT. P. MaMehmet C. Öztürk
Published in: IBM J. Res. Dev. (2002)
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