L.-Å. Ragnarsson

Publication Activity (10 Years)

Years Active: 2005-2021
Publications (10 Years): 2

Top Topics

Cmos Technology

Field Effect Transistors

Top Venues

Publications

Jacopo Franco, H. Arimura, J.-F. de Marneffe, A. Vandooren, L.-Å. Ragnarsson, Zhicheng Wu, Dieter Claes, E. Dentoni Litta, N. Horiguchi, Kris Croes, Dimitri Linten, Tibor Grasser, Ben Kaczer
Novel low thermal budget gate stack solutions for BTI reliability in future Logic Device technologies : Invited paper. ICICDT (2021)
Thomas Chiarella, S. Kubicek, E. Rosseel, Romain Ritzenthaler, Andriy Hikavyy, P. Eyben, A. De Keersgieter, L.-Å. Ragnarsson, M.-S. Kim, S.-A. Chew, Tom Schram, S. Demuynck, Miroslav Cupák, Luc Rijnders, Morin Dehan, Naoto Horiguchi, Jérôme Mitard, Dan Mocuta, Anda Mocuta, Aaron Voon-Yew Thean
Towards high performance sub-10nm finW bulk FinFET technology. ESSDERC (2016)
Giulia Piccolo, P. I. Kuindersma, L.-Å. Ragnarsson, Raymond J. E. Hueting, Nadine Collaert, Jurriaan Schmitz
Silicon LEDs in FinFET technology. ESSDERC (2014)
Romain Ritzenthaler, Tom Schram, Erik Bury, Jérôme Mitard, L.-Å. Ragnarsson, Guido Groeseneken, N. Horiguchi, Aaron Thean, Alessio Spessot, Christian Caillat, V. Srividya, Pierre Fazan
Low-power DRAM-compatible Replacement Gate High-k/Metal Gate stacks. ESSDERC (2012)
Jacopo Franco, Ben Kaczer, Jérôme Mitard, Maria Toledano-Luque, Felice Crupi, Geert Eneman, Ph. J. Rousse, Tibor Grasser, M. Cho, Thomas Kauerauf, Liesbeth Witters, Geert Hellings, L.-Å. Ragnarsson, Naoto Horiguchi, Marc M. Heyns, Guido Groeseneken
Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications. ICICDT (2012)
W. Deweerd, Vidya Kaushik, J. Chen, Y. Shimamoto, Tom Schram, L.-Å. Ragnarsson, Annelies Delabie, Luigi Pantisano, B. Eyckens, J. W. Maes
-shift problem of Hf/polysilicon-based gate stacks: a solution-based survey. Microelectron. Reliab. 45 (5-6) (2005)
G. S. Lujan, Wim Magnus, L.-Å. Ragnarsson, S. Kubicek, Stefan De Gendt, Marc M. Heyns, Kristin De Meyer
Modelling mobility degradation due to remote Coulomb scattering from dielectric charges and its impact on MOS device performance. Microelectron. Reliab. 45 (5-6) (2005)
Tom Schram, L.-Å. Ragnarsson, G. S. Lujan, W. Deweerd, J. Chen, W. Tsai, K. Henson, R. J. P. Lander, J. C. Hooker, J. Vertommen
/TaN and SiON/TaN nMOS transistors. Microelectron. Reliab. 45 (5-6) (2005)