Side and Corner Region Non-Uniformities in Grown SiO2 and Their Implications on Current, Capacitance and Breakdown Characteristics.
J. P. BastosBarry J. O'SullivanYusuke HigashiAdrian Vaisman ChasinJacopo FrancoHiroaki ArimuraJ. GangulyElena CapogrecoAlessio SpessotN. HoriguchiPublished in: IRPS (2024)