Binjie Cheng

Publication Activity (10 Years)

Years Active: 2004-2016
Publications (10 Years): 2

Top Topics

Statistical Analysis

Power Consumption

Top Venues

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.

Microelectron. J.

Publications

André Lange, Christoph Sohrmann, Roland Jancke, Joachim Haase, Binjie Cheng, Asen Asenov, Ulf Schlichtmann
Multivariate Modeling of Variability Supporting Non-Gaussian and Correlated Parameters. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 35 (2) (2016)
Razaidi Hussin, Louis Gerrer, Jie Ding, Liping Wang, Salvatore M. Amoroso, Binjie Cheng, Dave Reid, Pieter Weckx, Marco Simicic, Jacopo Franco, Annelies Vanderheyden, Danielle Vanhaeren, Naoto Horiguchi, Ben Kaczer, Asen Asenov
Statistical simulations of 6T-SRAM cell ageing using a reliability aware simulation flow. ESSDERC (2015)
Xingsheng Wang, Binjie Cheng, Andrew R. Brown, Campbell Millar, Asen Asenov
Accurate simulations of the interplay between process and statistical variability for nanoscale FinFET-based SRAM cell stability. ESSDERC (2014)
Liping Wang, Andrew R. Brown, Binjie Cheng, Asen Asenov
Analytical Models for Three-Dimensional Ion Implantation Profiles in FinFETs. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 32 (12) (2013)
Xingsheng Wang, Binjie Cheng, Jente B. Kuang, Andrew R. Brown, Campbell Millar, Asen Asenov
Statistical Variability and Reliability and the Impact on Corresponding 6T-SRAM Cell Design for a 14-nm Node SOI FinFET Technology. IEEE Des. Test 30 (6) (2013)
Negin Moezi, Daryoosh Dideban, Binjie Cheng, Scott Roy, Asen Asenov
Impact of statistical parameter set selection on the statistical compact model accuracy: BSIM4 and PSP case study. Microelectron. J. 44 (1) (2013)
Binjie Cheng, Xingsheng Wang, Andrew R. Brown, Jente B. Kuang, Dave Reid, Campbell Millar, Sani R. Nassif, Asen Asenov
SRAM device and cell co-design considerations in a 14nm SOI FinFET technology. ISCAS (2013)
Xingsheng Wang, Binjie Cheng, Andrew R. Brown, Campbell Millar, Jente B. Kuang, Sani R. Nassif, Asen Asenov
Impact of statistical variability and charge trapping on 14 nm SOI FinFET SRAM cell stability. ESSDERC (2013)
Tong Boon Tang, Alan F. Murray, Binjie Cheng, Asen Asenov
A framework to study time-dependent variability in circuits at sub-35nm technology nodes. ISCAS (2012)
Xingsheng Wang, Binjie Cheng, Andrew R. Brown, Campbell Millar, Asen Asenov
Statistical variability in 14-nm node SOI FinFETs and its impact on corresponding 6T-SRAM cell design. ESSDERC (2012)
Asen Asenov, Andrew R. Brown, Binjie Cheng
Statistical aspects of NBTI/PBTI and impact on SRAM yield. DATE (2011)
Feng Hong, Binjie Cheng, Scott Roy, David R. S. Cumming
An analytical mismatch model of nano-CMOS device under impact of intrinsic device variability. ISCAS (2011)
Tong Boon Tang, Alan F. Murray, Binjie Cheng, Asen Asenov
Statistical NBTI-effect prediction for ULSI circuits. ISCAS (2010)
Binjie Cheng, Daryoosh Dideban, Negin Moezi, Campbell Millar, Gareth Roy, Xingsheng Wang, Scott Roy, Asen Asenov
Capturing intrinsic parameter fluctuations using the PSP compact model. DATE (2010)
Binjie Cheng, Daryoosh Dideban, Negin Moezi, Campbell Millar, Gareth Roy, Xingsheng Wang, Scott Roy, Asen Asenov
Statistical-Variability Compact-Modeling Strategies for BSIM4 and PSP. IEEE Des. Test Comput. 27 (2) (2010)
Asen Asenov, Binjie Cheng, Daryoosh Dideban, Urban Kovac, Negin Moezi, Campbell Millar, Gareth Roy, Andrew R. Brown, Scott Roy
Modeling and simulation of transistor and circuit variability and reliability. CICC (2010)
Touqeer Azam, Binjie Cheng, David R. S. Cumming
Variability resilient low-power 7T-SRAM design for nano-scaled technologies. ISQED (2010)
Noor Ain Kamsani, Binjie Cheng, Scott Roy, Asen Asenov
Impact of Random Dopant Induced Statistical Variability on Inverter Switching Trajectories and Timing Variability. ISCAS (2009)
Nor Hisham Hamid, Alan F. Murray, David I. Laurenson, Scott Roy, Binjie Cheng
Probabilistic computing with future deep sub-micrometer devices: a modelling approach. ISCAS (3) (2005)
Binjie Cheng, Scott Roy, Asen Asenov
The impact of random doping effects on CMOS SRAM cell. ESSCIRC (2004)