SRAM device and cell co-design considerations in a 14nm SOI FinFET technology.
Binjie ChengXingsheng WangAndrew R. BrownJente B. KuangDave ReidCampbell MillarSani R. NassifAsen AsenovPublished in: ISCAS (2013)
Keyphrases
- design considerations
- silicon on insulator
- cmos technology
- random access memory
- low voltage
- dynamic random access memory
- embedded dram
- low power
- metal oxide semiconductor
- power consumption
- electronic devices
- parallel processing
- case study
- leakage current
- ibm power processor
- pedagogical agents
- machine learning
- high speed