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Impact of statistical variability and charge trapping on 14 nm SOI FinFET SRAM cell stability.

Xingsheng WangBinjie ChengAndrew R. BrownCampbell MillarJente B. KuangSani R. NassifAsen Asenov
Published in: ESSDERC (2013)
Keyphrases
  • silicon on insulator
  • statistical analysis
  • dynamic random access memory
  • cmos technology
  • power consumption
  • stability analysis
  • statistical information
  • sensor networks
  • confidence intervals
  • microscopy images