Nirmal Ramaswamy

Publication Activity (10 Years)

Years Active: 2015-2024
Publications (10 Years): 4

Top Topics

Biologically Inspired

Reliability Assessment

Synaptic Weights

Top Venues

IEEE J. Emerg. Sel. Topics Circuits Syst.

Publications

Ashonita Chavan, Adharsh Rajagopal, Yixin Yan, Isamu Asano, Devanarayanan Ettisserry, Vassil Antonov, Giorgio Servalli, Alessandro Calderoni, Nirmal Ramaswamy
Materials Engineering for High Performance Ferroelectric Memory. IMW (2024)
Devanarayanan Ettisserry, Angelo Visconti, Mauro Bonanomi, Riccardo Pazzocco, Andrea Locatelli, Alessandro Sebastiani, Ashonita Chavan, Matthew Hollander, Giorgio Servalli, Alessandro Calderoni, Nirmal Ramaswamy
Comprehensive Reliability Assessment of 32Gb (Hf,Zr)O2-Based Ferroelectric NVDRAM. IRPS (2024)
Valerio Milo, Giacomo Pedretti, Roberto Carboni, Alessandro Calderoni, Nirmal Ramaswamy, Stefano Ambrogio, Daniele Ielmini
A 4-Transistors/1-Resistor Hybrid Synapse Based on Resistive Switching Memory (RRAM) Capable of Spike-Rate-Dependent Plasticity (SRDP). IEEE Trans. Very Large Scale Integr. Syst. 26 (12) (2018)
Giacomo Pedretti, Valerio Milo, Stefano Ambrogio, Roberto Carboni, Stefano Bianchi, Alessandro Calderoni, Nirmal Ramaswamy, Alessandro S. Spinelli, Daniele Ielmini
Stochastic Learning in Neuromorphic Hardware via Spike Timing Dependent Plasticity With RRAM Synapses. IEEE J. Emerg. Sel. Topics Circuits Syst. 8 (1) (2018)
Simone Balatti, Stefano Ambrogio, Zhongqiang Wang, Scott Sills, Alessandro Calderoni, Nirmal Ramaswamy, Daniele Ielmini
Understanding pulsed-cycling variability and endurance in HfOx RRAM. IRPS (2015)
Scott Sills, Shuichiro Yasuda, Alessandro Calderoni, Christopher Cardon, Jonathan Strand, Katsuhisa Aratani, Nirmal Ramaswamy
Challenges for high-density 16Gb ReRAM with 27nm technology. VLSIC (2015)