Angelo Visconti

Publication Activity (10 Years)

Years Active: 2000-2024
Publications (10 Years): 2

Top Topics

Foreground And Background

Software Defect

Reliability Assessment

Mahalanobis Distance

Top Venues

Publications

Devanarayanan Ettisserry, Angelo Visconti, Mauro Bonanomi, Riccardo Pazzocco, Andrea Locatelli, Alessandro Sebastiani, Ashonita Chavan, Matthew Hollander, Giorgio Servalli, Alessandro Calderoni, Nirmal Ramaswamy
Comprehensive Reliability Assessment of 32Gb (Hf,Zr)O2-Based Ferroelectric NVDRAM. IRPS (2024)
Christian Monzio Compagnoni, Akira Goda, Alessandro S. Spinelli, Peter Feeley, Andrea L. Lacaita, Angelo Visconti
Reviewing the Evolution of the NAND Flash Technology. Proc. IEEE 105 (9) (2017)
Giovanni M. Paolucci, M. Bertuccio, C. Monzio Compagnoni, Silvia Beltrami, Alessandro S. Spinelli, Andrea L. Lacaita, Angelo Visconti
Cycling-induced threshold-voltage instabilities in nanoscale NAND flash memories: Sensitivity to the array background pattern. ESSDERC (2014)
Marcello Calabrese, Carmine Miccoli, Christian Monzio Compagnoni, Luca Chiavarone, Silvia Beltrami, Andrea Parisi, Sebastiano Bartolone, Andrea L. Lacaita, Alessandro S. Spinelli, Angelo Visconti
Accelerated reliability testing of flash memory: Accuracy and issues on a 45nm NOR technology. ICICDT (2013)
Simone Gerardin, M. Bagatin, Alessandro Paccagnella, G. Cellere, Angelo Visconti, M. Bonanomi
Impact of total dose on heavy-ion upsets in floating gate arrays. Microelectron. Reliab. 50 (9-11) (2010)
M. Bagatin, G. Cellere, Simone Gerardin, Alessandro Paccagnella, Angelo Visconti, Silvia Beltrami, M. Maccarrone
Single Event Effects in 1Gbit 90nm NAND Flash Memories under Operating Conditions. IOLTS (2007)
G. Cellere, Alessandro Paccagnella, Angelo Visconti, M. Bonanomi
Erratic Effects of Irradiation in Floating Gate Memory Cells. IOLTS (2006)
G. Cellere, Alessandro Paccagnella, Angelo Visconti, M. Bonanomi
Soft Errors induced by single heavy ions in Floating Gate memory arrays. DFT (2005)
Roberto Bez, Emilio Camerlenghi, Alberto Modelli, Angelo Visconti
Introduction to flash memory. Proc. IEEE 91 (4) (2003)
Giovanni Campardo, Rino Micheloni, Stefano Commodaro, Emilio Yero, Matteo Zammattio, Sabina Mognoni, Andrea Sacco, Massimiliano Picca, Alessandro Manstretta, Marco Scotti, Ilaria Motta, C. Golla, Andrea Pierin, Roberto Bez, Alessandro Grossi, Alberto Modelli, Angelo Visconti, Osama Khouri, Guido Torelli
3-V-only 50-MHz 64-Mb 2-b/cell CHE NOR flash memory. IEEE J. Solid State Circuits 35 (11) (2000)