Seonyong Cha

Publication Activity (10 Years)

Years Active: 2022-2024
Publications (10 Years): 10

Top Topics

Recognition Accuracy

Top Venues

VLSI Technology and Circuits

Publications

Youngjae Kwon, Won-Tae Koo, Sangsu Park, Dong Ik Suh, Gunhee Lee, Hyung Dong Lee, Youngbae Ahn, Dohee Kim, Seungwook Ryu, Hoseok Em, Seokjoon Kang, Chang Won Jeong, Junho Cheon, Hyejung Choi, Soo Gil Kim, Seho Lee, Jaeyun Yi, Seonyong Cha
Improvement of MAC Accuracy using Oxygen Diffusion Barriers in Resistive Synaptic Cell Arrays. IMW (2024)
Won-Tae Koo, Jae-Gil Lee, Gunhee Lee, Woocheol Lee, Jungwook Woo, Dong Ik Suh, Joongsik Kim, Hyung Dong Lee, Seho Lee, Jaeyun Yi, Seonyong Cha
Modeling and Demonstration for Multi-level Weight Conductance in Computational FeFET Memory Cell. IMW (2024)
Jihun Kim, Sangsu Park, Hongju Suh, Youngjae Kwon, Seonghun Lee, Yubin Lee, Kayoung Kim, Eungu Han, Jongil Kim, Kyu Sung Kim, Hyejung Choi, Seungwook Ryu, Su Jin Chae, Seho Lee, Soo Gil Kim, Jaeyun Yi, Seonyong Cha
Realistic Noise-aware Training as a Component of the Holistic ACiM Development Platform. IMW (2024)
Whayoung Kim, Jaehyeon Kim, Dongjin Ko, Jun-Hwe Cha, Gyeongcheol Park, Youngbae Ahn, Jong-Young Lee, Minchul Sung, Hyejung Choi, Seung Wook Ryu, Seiyon Kim, Myung-Hee Na, Seonyong Cha
Demonstration of crystalline IGZO transistor with high thermal stability for memory applications. VLSI Technology and Circuits (2023)
Jaeyun Yi, Myoungsub Kim, Jungwon Seo, Namkyun Park, Seungyun Lee, Jongil Kim, Gapsok Do, Hongjin Jang, Hyochol Koo, Sunglae Cho, Sujin Chae, Taehoon Kim, Myung-Hee Na, Seonyong Cha
The chalcogenide-based memory technology continues: beyond 20nm 4-deck 256Gb cross-point memory. VLSI Technology and Circuits (2023)
Bvunarvul Kim, Seungpil Lee, Beomseok Hah, Kanawoo Park, Yongsoon Park, Kangwook Jo, Yujong Noh, Hyeon-Cheon Seol, Hyunsoo Lee, Jae-Hyeon Shin, Seongjin Choi, Youngdon Jung, Sungho Ahn, Yonghun Park, Sujeong Oh, Myungsu Kim, Seonauk Kim, Hyunwook Park, Taeho Lee, Haeun Won, Minsung Kim, Cheulhee Koo, Yeonjoo Choi, Suyoung Choi, Sechun Park, Dongkyu Youn, Junyoun Lim, Wonsun Park, Hwang Hur, Kichang Kwean, Hongsok Choi, Woopyo Jeong, Sungyong Chung, Jungdal Choi, Seonyong Cha
A High-Performance 1Tb 3b/Cell 3D-NAND Flash with a 194MB/s Write Throughput on over 300 Layers $\mathsf{i}$. ISSCC (2023)
Sunghyun Yoon, Sung-In Hong, Daehyun Kim, Garam Choi, Young Mo Kim, Kyunghoon Min, Seiyon Kim, Myung-Hee Na, Seonyong Cha
QLC Programmable 3D Ferroelectric NAND Flash Memory by Memory Window Expansion using Cell Stack Engineering. VLSI Technology and Circuits (2023)
Daeyong Shim, Chunseok Jeong, Euncheol Lee, Junmo Kang, Seokcheol Yoon, Yongkee Kwon, Il Park, Hyun Ahn, Seonyong Cha, Jinkook Kim
Holistic approaches to memory solutions for the Autonomous Driving Era. ISCAS (2022)
Sangsu Park, Gyonhui Lee, Youngjae Kwon, Dong Ik Suh, Hanwool Lee, Sangeun Je, Dabin Kim, Dohan Lee, Seungwook Ryu, Seungbum Kim, Euiseok Kim, Sunghoon Lee, Kyoung Park, Seho Lee, Myung-Hee Na, Seonyong Cha
Recognition Accuracy Enhancement using Interface Control with Weight Variation-Lowering in Analog Computation-in-Memory. IMW (2022)
Jae-Gil Lee, Joongsik Kim, Dong Ik Suh, Ildo Kim, Gwon Deok Han, Seung Wook Ryu, Seho Lee, Myung-Hee Na, Seonyong Cha, Hyeon Woo Park, Cheol Seong Hwang
Memory Window Expansion for Ferroelectric FET based Multilevel NVM: Hybrid Solution with Combination of Polarization and Injected Charges. IMW (2022)