Myung-Hee Na

Publication Activity (10 Years)

Years Active: 2022-2023
Publications (10 Years): 6

Top Topics

Recognition Accuracy

Top Venues

VLSI Technology and Circuits

Publications

Whayoung Kim, Jaehyeon Kim, Dongjin Ko, Jun-Hwe Cha, Gyeongcheol Park, Youngbae Ahn, Jong-Young Lee, Minchul Sung, Hyejung Choi, Seung Wook Ryu, Seiyon Kim, Myung-Hee Na, Seonyong Cha
Demonstration of crystalline IGZO transistor with high thermal stability for memory applications. VLSI Technology and Circuits (2023)
Jaeyun Yi, Myoungsub Kim, Jungwon Seo, Namkyun Park, Seungyun Lee, Jongil Kim, Gapsok Do, Hongjin Jang, Hyochol Koo, Sunglae Cho, Sujin Chae, Taehoon Kim, Myung-Hee Na, Seonyong Cha
The chalcogenide-based memory technology continues: beyond 20nm 4-deck 256Gb cross-point memory. VLSI Technology and Circuits (2023)
Sunghyun Yoon, Sung-In Hong, Daehyun Kim, Garam Choi, Young Mo Kim, Kyunghoon Min, Seiyon Kim, Myung-Hee Na, Seonyong Cha
QLC Programmable 3D Ferroelectric NAND Flash Memory by Memory Window Expansion using Cell Stack Engineering. VLSI Technology and Circuits (2023)
Sangsu Park, Gyonhui Lee, Youngjae Kwon, Dong Ik Suh, Hanwool Lee, Sangeun Je, Dabin Kim, Dohan Lee, Seungwook Ryu, Seungbum Kim, Euiseok Kim, Sunghoon Lee, Kyoung Park, Seho Lee, Myung-Hee Na, Seonyong Cha
Recognition Accuracy Enhancement using Interface Control with Weight Variation-Lowering in Analog Computation-in-Memory. IMW (2022)
Jae-Gil Lee, Joongsik Kim, Dong Ik Suh, Ildo Kim, Gwon Deok Han, Seung Wook Ryu, Seho Lee, Myung-Hee Na, Seonyong Cha, Hyeon Woo Park, Cheol Seong Hwang
Memory Window Expansion for Ferroelectric FET based Multilevel NVM: Hybrid Solution with Combination of Polarization and Injected Charges. IMW (2022)
Sijung Yoo, Donghoon Kim, Yoon Mo Koo, Sujee Kim Wooju Jeong, Hyungjoon Shim, Won-Jun Lee, Beom Seok Lee, Seungyun Lee, Hyejung Choi, Hyung Dong Lee, Taehoon Kim, Myung-Hee Na
Structural and Device Considerations for Vertical Cross Point Memory with Single-stack Memory toward CXL Memory beyond 1x nm 3DXP. IMW (2022)