QLC Programmable 3D Ferroelectric NAND Flash Memory by Memory Window Expansion using Cell Stack Engineering.
Sunghyun YoonSung-In HongDaehyun KimGaram ChoiYoung Mo KimKyunghoon MinSeiyon KimMyung-Hee NaSeonyong ChaPublished in: VLSI Technology and Circuits (2023)
Keyphrases
- flash memory
- main memory
- garbage collection
- random access
- secondary storage
- solid state
- file system
- buffer management
- storage media
- embedded systems
- disk drives
- data storage
- memory management
- low cost
- storage devices
- storage management
- b tree
- hand held devices
- sliding window
- database systems
- general purpose
- small size
- storage systems
- artificial intelligence
- database management systems
- software engineering
- multi dimensional
- hard disk
- digital signal processors
- object oriented
- data structure
- case study
- real time