Yujong Noh

Publication Activity (10 Years)

Years Active: 2009-2023
Publications (10 Years): 3

Top Topics

Storage Management

Top Venues

Publications

Bvunarvul Kim, Seungpil Lee, Beomseok Hah, Kanawoo Park, Yongsoon Park, Kangwook Jo, Yujong Noh, Hyeon-Cheon Seol, Hyunsoo Lee, Jae-Hyeon Shin, Seongjin Choi, Youngdon Jung, Sungho Ahn, Yonghun Park, Sujeong Oh, Myungsu Kim, Seonauk Kim, Hyunwook Park, Taeho Lee, Haeun Won, Minsung Kim, Cheulhee Koo, Yeonjoo Choi, Suyoung Choi, Sechun Park, Dongkyu Youn, Junyoun Lim, Wonsun Park, Hwang Hur, Kichang Kwean, Hongsok Choi, Woopyo Jeong, Sungyong Chung, Jungdal Choi, Seonyong Cha
A High-Performance 1Tb 3b/Cell 3D-NAND Flash with a 194MB/s Write Throughput on over 300 Layers $\mathsf{i}$. ISSCC (2023)
Wanik Cho, Jongseok Jung, Jongwoo Kim, Junghoon Nam, Sangkyu Lee, Yujong Noh, Dauni Kim, Wanseob Lee, Kayoung Cho, Kwanho Kim, Heejoo Lee, Sooyeol Chai, Eunwoo Jo, Hanna Cho, Jong-Seok Kim, Chankeun Kwon, Cheolioona Park, Hveonsu Nam, Haeun Won, Taeho Kim, Kyeonghwan Park, Sanghoon Oh, Jinhyun Ban, Junyoung Park, Jae-Hyeon Shin, Taisik Shin, Junseo Jang, Jiseong Mun, Jehyun Choi, Hyunseung Choi, Sung-Wook Choi, Wonsun Park, Dongkvu Yoon, Minsu Kim, Junyoun Lim, Chiwook An, Hyunyoung Shirr, Haesoon Oh, Haechan Park, Sungbo Shim, Hwang Huh, Honasok Choi, Seungpil Lee, Jaesuna Sim, Kichan Gwon, Jumsoo Kim, Woopyo Jeong, Jungdal Choi, Kyowon Jin
A 1-Tb, 4b/Cell, 176-Stacked-WL 3D-NAND Flash Memory with Improved Read Latency and a 14.8Gb/mm2 Density. ISSCC (2022)
Hwang Huh, Wanik Cho, Jinhaeng Lee, Yujong Noh, Yongsoon Park, Sunghwa Ok, Jongwoo Kim, Kayoung Cho, Hyunchul Lee, Geonu Kim, Kangwoo Park, Kwanho Kim, Heejoo Lee, Sooyeol Chai, Chankeun Kwon, Hanna Cho, Chanhui Jeong, Yujin Yang, Jayoon Goo, Jangwon Park, Juhyeong Lee, Heonki Kirr, Kangwook Jo, Cheoljoong Park, Hyeonsu Nam, Hyunseok Song, Sangkyu Lee, Woopyo Jeong, Kun-Ok Ahn, Tae-Sung Jung
13.2 A 1Tb 4b/Cell 96-Stacked-WL 3D NAND Flash Memory with 30MB/s Program Throughput Using Peripheral Circuit Under Memory Cell Array Technique. ISSCC (2020)
Samkyu Won, Yujong Noh, Hyunchul Cho, Jeil Ryu, Sungwook Choi, Sungdae Choi, DuckJu Kim, Junseop Chung, Bong-Seok Han, Eui-Young Chung
High-voltage wordline generator for low-power program operation in NAND flash memories. A-SSCC (2011)
Changhyuk Lee, Sok-Kyu Lee, Sunghoon Ahn, Jinhaeng Lee, Wonsun Park, Yongdeok Cho, Chaekyu Jang, Chulwoo Yang, Sanghwa Chung, In-Suk Yun, Byoungin Joo, Byoungkwan Jeong, Jeeyul Kim, Jeakwan Kwon, Hyunjong Jin, Yujong Noh, Jooyun Ha, Moonsoo Sung, Daeil Choi, Sanghwan Kim, Jeawon Choi, Taeho Jeon, Heejoung Park, Joong-Seob Yang, Yo-Hwan Koh
A 32-Gb MLC NAND Flash Memory With Vth Endurance Enhancing Schemes in 32 nm CMOS. IEEE J. Solid State Circuits 46 (1) (2011)
Changhyuk Lee, Sok-Kyu Lee, Sunghoon Ahn, Jinhaeng Lee, Wonsun Park, Yongdeok Cho, Chaekyu Jang, Chulwoo Yang, Sanghwa Chung, In-Suk Yun, Byoungin Joo, Byoungkwan Jeong, Jeeyul Kim, Jeakwan Kwon, Hyunjong Jin, Yujong Noh, Jooyun Ha, Moonsoo Sung, Daeil Choi, Sanghwan Kim, Jeawon Choi, Taeho Jeon, Joong-Seob Yang, Yo-Hwan Koh
A 32Gb MLC NAND-flash memory with Vth-endurance-enhancing schemes in 32nm CMOS. ISSCC (2010)
Seung-Ho Chang, Sok-Kyu Lee, Seong-Je Park, Min-Joong Jung, Jung-Chul Han, In-Soo Wang, Kyu-Hee Lim, Jung-Hwan Lee, Ji-Hwan Kim, Won-Kyung Kang, Tai-Kyu Kang, Hee-Su Byun, Yujong Noh, Lee-Hyun Kwon, Bon-Kwang Koo, Myung Cho, Joong-Seob Yang, Yo-Hwan Koh
A 48nm 32Gb 8-level NAND flash memory with 5.5MB/s program throughput. ISSCC (2009)