A 32-Gb MLC NAND Flash Memory With Vth Endurance Enhancing Schemes in 32 nm CMOS.
Changhyuk LeeSok-Kyu LeeSunghoon AhnJinhaeng LeeWonsun ParkYongdeok ChoChaekyu JangChulwoo YangSanghwa ChungIn-Suk YunByoungin JooByoungkwan JeongJeeyul KimJeakwan KwonHyunjong JinYujong NohJooyun HaMoonsoo SungDaeil ChoiSanghwan KimJeawon ChoiTaeho JeonHeejoung ParkJoong-Seob YangYo-Hwan KohPublished in: IEEE J. Solid State Circuits (2011)
Keyphrases
- flash memory
- solid state
- high speed
- garbage collection
- main memory
- buffer management
- random access
- file system
- embedded systems
- disk drives
- b tree
- database systems
- data storage
- small size
- silicon on insulator
- storage devices
- cmos technology
- low cost
- hand held devices
- metal oxide semiconductor
- power consumption
- low voltage
- nm technology
- storage systems
- low power
- database management systems