Raik Hoffmann

Publication Activity (10 Years)

Years Active: 2019-2024
Publications (10 Years): 12

Top Topics

Rotation Invariance

Field Effect Transistors

Reliability Assessment

Top Venues

VLSI Technology and Circuits

Adv. Intell. Syst.

Publications

Ayse Sünbül, David Lehninger, Raik Hoffmann, Hannes Mähne, Kerstin Bernert, Steffen Thiem, Thomas Kämpfe, Konrad Siedel, Maximilian Lederer, Lukas M. Eng
Improved Endurance Reliability of Ferroelectric Hafnium Oxide-Based BEoL Integrated MFM Capacitors. IRPS (2024)
Athira Sunil, Masud Rana SK, Maximilian Lederer, Yannick Raffel, Franz Müller, Ricardo Olivo, Raik Hoffmann, Konrad Seidel, Thomas Kämpfe, Bhaswar Chakrabarti, Sourav De
Ferroelectric Field Effect Transistors-Based Content-Addressable Storage-Class Memory: A Study on the Impact of Device Variation and High-Temperature Compatibility. Adv. Intell. Syst. 6 (4) (2024)
Maximilian Lederer, Franz Müller, Raik Hoffmann, Ricardo Olivo, Yannick Raffel, Shouzhuo Yang, Sourav De, Roman Potjan, Oliver Ostien, Abdelrahman Altawil, Ayse Sünbül, David Lehninger, Thomas Kämpfe, Konrad Seidel
Enhanced reliability and trapping behavior in ferroelectric FETs under cryogenic conditions. IMW (2024)
Franz Müller, Sourav De, Maximilian Lederer, Raik Hoffmann, Ricardo Olivo, Thomas Kämpfe, Konrad Seidel, Tarek Ali, Halid Mulaosmanovic, Stefan Dünkel, Johannes Müller, Sven Beyer, Gerald Gerlach
Multi-Level Operation of Ferroelectric FET Memory Arrays for Compute-In-Memory Applications. IMW (2023)
Konrad Seidel, David Lehninger, Franz Müller, Yannick Raffel, Ayse Sünbül, Ricardo Revello, Raik Hoffmann, Sourav De, Thomas Kämpfe, Maximilian Lederer
Hafnium oxide-based Ferroelectric Memories: Are we ready for Application? IMW (2023)
David Lehninger, Hannes Mähne, Tarek Ali, Raik Hoffmann, Ricardo Olivo, Maximilian Lederer, Konstantin Mertens, Thomas Kämpfe, Kati Biedermann, Matthias Landwehr, Andreas Heinig, Defu Wang, Yukai Shen, Kerstin Bernert, Steffen Thiem, Konrad Seidel
Integration of BEoL Compatible 1T1C FeFET Memory Into an Established CMOS Technology. IMW (2022)
Konrad Seidel, David Lehninger, Raik Hoffmann, Tarek Ali, Maximilian Lederer, Ricardo Revello, Konstantin Mertens, Kati Biedermann, Yukai Shen, Defu Wang, Matthias Landwehr, Andreas Heinig, Thomas Kämpfe, Hannes Mähne, Kerstin Bernert, Steffen Thiem
Memory Array Demonstration of fully integrated 1T-1C FeFET concept with separated ferroelectric MFM device in interconnect layer. VLSI Technology and Circuits (2022)
Ayse Sünbül, Tarek Ali, Raik Hoffmann, Ricardo Revello, Yannick Raffel, Pardeep Duhan, David Lehninger, Kati Kühnel, Matthias Rudolph, Sebastian Oehler, Philipp Schramm, Malte Czernohorsky, Konrad Seidel, Thomas Kämpfe, Lukas M. Eng
Impact of Temperature on Reliability of MFIS HZO-based Ferroelectric Tunnel Junctions. IRPS (2022)
Yannick Raffel, Sunanda Thunder, Maximilian Lederer, Ricardo Olivo, Raik Hoffmann, Luca Pirro, Sven Beyer, Talha Chohan, Po-Tsang Huang, Sourav De, Thomas Kämpfe, Konrad Seidel, Johannes Heitman
Interfacial Layer Engineering to Enhance Noise Immunity of FeFETs for IMC Applications. ICICDT (2022)
Tarek Ali, Kati Kühnel, Malte Czernohorsky, Matthias Rudolph, Björn Pätzold, Ricardo Olivo, David Lehninger, Konstantin Mertens, Frank Müller, Maximilian Lederer, Raik Hoffmann, Clemens Mart, Mahsa N. Kalkani, Philipp Steinke, Thomas Kämpfe, Johannes Müller, Jan Van Houdt, Konrad Seidel, Lukas M. Eng
Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells. IRPS (2020)
Betting Wehring, Raik Hoffmann, Lukas Gerlich, Malte Czernohorsky, Benjamin Uhlig, Robert Seidel, Tobias Barchewitz, Frank Schlaphof, Lutz Meinshausen, Christoph Leyens
BEoL Reliability, XPS and REELS Study on low-k Dielectrics to understand Breakdown Mechanisms. IRPS (2020)
Konrad Seidel, K. Biedermann, Jan Van Houdt, Tarek Ali, Raik Hoffmann, Kati Kühnel, Malte Czernohorsky, Matthias Rudolph, Björn Pätzold, Philipp Steinke, K. Zimmermann
Gate Stack Optimization Toward Disturb-Free Operation of Ferroelectric HSO based FeFET for NAND Applications. NVMTS (2019)