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Ferroelectric Field Effect Transistors-Based Content-Addressable Storage-Class Memory: A Study on the Impact of Device Variation and High-Temperature Compatibility.

Athira SunilMasud Rana SKMaximilian LedererYannick RaffelFranz MüllerRicardo OlivoRaik HoffmannKonrad SeidelThomas KämpfeBhaswar ChakrabartiSourav De
Published in: Adv. Intell. Syst. (2024)
Keyphrases
  • high temperature
  • content addressable
  • field effect transistors
  • databases
  • neural network
  • high density
  • semiconductor devices