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Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells.

Tarek AliKati KühnelMalte CzernohorskyMatthias RudolphBjörn PätzoldRicardo OlivoDavid LehningerKonstantin MertensFrank MüllerMaximilian LedererRaik HoffmannClemens MartMahsa N. KalkaniPhilipp SteinkeThomas KämpfeJohannes MüllerJan Van HoudtKonrad SeidelLukas M. Eng
Published in: IRPS (2020)
Keyphrases
  • room temperature
  • si sio
  • metal oxide
  • memory usage
  • database
  • real time
  • data sets
  • main memory
  • reliability analysis
  • memory size
  • leakage current
  • artificial neural networks
  • random access
  • electron microscopy