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Anti-ferroelectric ZrO2, an enabler for low power non-volatile 1T-1C and 1T random access memories.
Milan Pesic
Michael Hoffmann
Claudia Richter
Stefan Slesazeck
Thomas Kämpfe
L. M. Eng
Thomas Mikolajick
Uwe Schroeder
Published in:
ESSDERC (2017)
Keyphrases
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low power
random access
flash memory
power consumption
low cost
high speed
solid state
data storage
single chip
file system
vlsi circuits
logic circuits
gate array
associative memory
main memory
power dissipation
power reduction
external memory
storage devices
cmos technology
image sensor
mixed signal