Ronald D. Schrimpf

Publication Activity (10 Years)

Years Active: 2001-2024
Publications (10 Years): 6

Top Topics

Carbon Nanotubes

Immune Response

Charge Coupled Devices

Tomographic Images

Top Venues

Microelectron. Reliab.

Publications

En Xia Zhang, Shintaro Toguchi, Zi Xiang Guo, Michael L. Alles, Ronald D. Schrimpf, Daniel M. Fleetwood
Charge Trapping in Irradiated 3D Devices and ICs (Invited). IRPS (2024)
Sajal Islam, Aditha S. Senarath, Arijit Sengupta, En-xia Zhang, Dennis R. Ball, Daniel M. Fleetwood, Ronald D. Schrimpf, Esmat Farzana, Arkka Bhattacharyya, Nolan S. Hendricks, James S. Speck
Single-Event Burnout by Cf-252 Irradiation in Vertical $\beta$-Ga2O3 Diodes with Pt and PtOx Schottky Contacts and High Permittivity Dielectric Field Plate. DRC (2023)
Peng Wang, En-xia Zhang, Daniel M. Fleetwood, Peng Fei Wang, Michael W. McCurdy, Ji-Tzouh Lin, Michael L. Alles, Jim L. Davidson, Bruce W. Alphenaar, Ronald D. Schrimpf
Effects of Charge Generation and Trapping on the X-ray Response of Strained AlGaN/GaN HEMTs. ASICON (2021)
Alexandre Simionovski, Gilson I. Wirth, Ronald D. Schrimpf, Bharat L. Bhuva
A TCAD evaluation of a single Bulk-BICS with integrative memory cell. Microelectron. J. 80 (2018)
A. Sasikumar, Z. Zhang, P. Kumar, En-xia Zhang, Daniel M. Fleetwood, Ronald D. Schrimpf, Paul Saunier, Cathy Lee, S. A. Ringel, A. R. Arehart
Proton irradiation-induced traps causing VT instabilities and RF degradation in GaN HEMTs. IRPS (2015)
Balaji Narasimham, Jung K. Wang, Narayana Vedula, Saket Gupta, Brandon Bartz, Carl Monzel, Indranil Chatterjee, Bharat L. Bhuva, Ronald D. Schrimpf, Robert A. Reed
Influence of supply voltage on the multi-cell upset soft error sensitivity of dual- and triple-well 28 nm CMOS SRAMs. IRPS (2015)
Aditya Kalavagunta, Shubhajit Mukherjee, Robert A. Reed, Ronald D. Schrimpf
Comparison between trap and self-heating induced mobility degradation in AlGaN/GaN HEMTs. Microelectron. Reliab. 54 (3) (2014)
Cher Xuan Zhang, En-xia Zhang, Daniel M. Fleetwood, Michael L. Alles, Ronald D. Schrimpf, Chris Rutherglen, Kosmas Galatsis
Total-ionizing-dose effects and reliability of carbon nanotube FET devices. Microelectron. Reliab. 54 (11) (2014)
Nihaar N. Mahatme, Indranil Chatterjee, Akash Patki, Daniel B. Limbrick, Bharat L. Bhuva, Ronald D. Schrimpf, William H. Robinson
An efficient technique to select logic nodes for single event transient pulse-width reduction. Microelectron. Reliab. 53 (1) (2013)
Nadia Rezzak, Pierre Maillard, Ronald D. Schrimpf, Michael L. Alles, Daniel M. Fleetwood, Yanfeng Albert Li
The impact of device width on the variability of post-irradiation leakage currents in 90 and 65 nm CMOS technologies. Microelectron. Reliab. 52 (11) (2012)
R. Arinero, En-xia Zhang, Nadia Rezzak, Ronald D. Schrimpf, Daniel M. Fleetwood, B. K. Choï, A. B. Hmelo, Julien Mekki, Antoine D. Touboul, Frédéric Saigné
High fluence 1.8 MeV proton irradiation effects on n-type MOS capacitors. Microelectron. Reliab. 51 (12) (2011)
Nadia Rezzak, Michael L. Alles, Ronald D. Schrimpf, Sarah Kalemeris, Lloyd W. Massengill, John Sochacki, Hugh J. Barnaby
The sensitivity of radiation-induced leakage to STI topology and sidewall doping. Microelectron. Reliab. 51 (5) (2011)
Tania Roy, Yevgeniy S. Puzyrev, En-xia Zhang, Sandeepan DasGupta, Sarah A. Francis, Daniel M. Fleetwood, Ronald D. Schrimpf, Umesh K. Mishra, Jim S. Speck, Sokrates T. Pantelides
-rich conditions. Microelectron. Reliab. 51 (2) (2011)
Sokrates T. Pantelides, L. Tsetseris, M. J. Beck, S. N. Rashkeev, G. Hadjisavvas, I. G. Batyrev, B. R. Tuttle, A. G. Marinopoulos, X. J. Zhou, Daniel M. Fleetwood, Ronald D. Schrimpf
Performance, reliability, radiation effects, and aging issues in microelectronics - from atomic-scale physics to engineering-level modeling. ESSCIRC (2009)
Federico Faccio, Hugh J. Barnaby, Xiao J. Chen, Daniel M. Fleetwood, Laura Gonella, Michael L. McLain, Ronald D. Schrimpf
Total ionizing dose effects in shallow trench isolation oxides. Microelectron. Reliab. 48 (7) (2008)
Daniel M. Fleetwood, M. P. Rodgers, L. Tsetseris, X. J. Zhou, I. Batyrev, S. Wang, Ronald D. Schrimpf, Sokrates T. Pantelides
Effects of device aging on microelectronics radiation response and reliability. Microelectron. Reliab. 47 (7) (2007)
Sokrates T. Pantelides, L. Tsetseris, S. N. Rashkeev, X. J. Zhou, Daniel M. Fleetwood, Ronald D. Schrimpf
Hydrogen in MOSFETs - A primary agent of reliability issues. Microelectron. Reliab. 47 (6) (2007)
A. M. Albadri, Ronald D. Schrimpf, Kenneth F. Galloway, D. Greg Walker
Single event burnout in power diodes: Mechanisms and models. Microelectron. Reliab. 46 (2-4) (2006)
P. C. Adell, Ronald D. Schrimpf, C. R. Cirba, W. T. Holman, X. Zhu, Hugh J. Barnaby, O. Mion
Single event transient effects in a voltage reference. Microelectron. Reliab. 45 (2) (2005)
Loren J. Wise, Ronald D. Schrimpf, Harold G. Parks, Kenneth F. Galloway
A generalized model for the lifetime of microelectronic components, applied to storage conditions. Microelectron. Reliab. 41 (2) (2001)
D. Greg Walker, T. S. Fisher, J. Liu, Ronald D. Schrimpf
Thermal modeling of single event burnout failure in semiconductor power devices. Microelectron. Reliab. 41 (4) (2001)