Michael L. Alles

Publication Activity (10 Years)

Years Active: 2008-2024
Publications (10 Years): 4

Top Topics

Positive Effects

Charge Coupled Devices

Monte Carlo Simulation

Tomographic Images

Top Venues

Microelectron. Reliab.

Publications

En Xia Zhang, Shintaro Toguchi, Zi Xiang Guo, Michael L. Alles, Ronald D. Schrimpf, Daniel M. Fleetwood
Charge Trapping in Irradiated 3D Devices and ICs (Invited). IRPS (2024)
Peng Wang, En-xia Zhang, Daniel M. Fleetwood, Peng Fei Wang, Michael W. McCurdy, Ji-Tzouh Lin, Michael L. Alles, Jim L. Davidson, Bruce W. Alphenaar, Ronald D. Schrimpf
Effects of Charge Generation and Trapping on the X-ray Response of Strained AlGaN/GaN HEMTs. ASICON (2021)
M. L. Breeding, R. A. Reed, K. M. Warren, Michael L. Alles
Exploration of the Impact of Physical Integration Schemes on Soft Errors in 3D ICs Using Monte Carlo Simulation. IRPS (2019)
N. Tam, Bharat L. Bhuva, Lloyd W. Massengill, D. Ball, Michael W. McCurdy, Michael L. Alles, Indranil Chatterjee
Multi-cell soft errors at the 16-nm FinFET technology node. IRPS (2015)
Cher Xuan Zhang, En-xia Zhang, Daniel M. Fleetwood, Michael L. Alles, Ronald D. Schrimpf, Chris Rutherglen, Kosmas Galatsis
Total-ionizing-dose effects and reliability of carbon nanotube FET devices. Microelectron. Reliab. 54 (11) (2014)
Nadia Rezzak, Pierre Maillard, Ronald D. Schrimpf, Michael L. Alles, Daniel M. Fleetwood, Yanfeng Albert Li
The impact of device width on the variability of post-irradiation leakage currents in 90 and 65 nm CMOS technologies. Microelectron. Reliab. 52 (11) (2012)
Nadia Rezzak, Michael L. Alles, Ronald D. Schrimpf, Sarah Kalemeris, Lloyd W. Massengill, John Sochacki, Hugh J. Barnaby
The sensitivity of radiation-induced leakage to STI topology and sidewall doping. Microelectron. Reliab. 51 (5) (2011)
Alexander I. Fedoseyev, Marek Turowski, Ashok Raman, Michael L. Alles, Robert A. Weller
Multiscale Numerical Models for Simulation of Radiation Events in Semiconductor Devices. ICCS (2) (2008)
Alexander I. Fedoseyev, Marek Turowski, Michael L. Alles, Robert A. Weller
Accurate numerical models for simulation of radiation events in nano-scale semiconductor devices. Math. Comput. Simul. 79 (4) (2008)