Daniel M. Fleetwood

Publication Activity (10 Years)

Years Active: 2002-2024
Publications (10 Years): 9

Top Topics

Ionizing Radiation

Digital X Ray Images

Structuring Elements

Multi Baseline Stereo

Top Venues

Microelectron. Reliab.

Publications

Delgermaa Nergui, M. Hosseinzadeh, Y. A. Mensah, H. P. Lee, D. G. Sam, K. Li, E. X. Zhang, Daniel M. Fleetwood, John D. Cressler
The Impact of Scaling on the Effects of Mixed-Mode Electrical Stress and Ionizing Radiation for 130-nm and 90-nm SiGe HBTs. IRPS (2024)
En Xia Zhang, Shintaro Toguchi, Zi Xiang Guo, Michael L. Alles, Ronald D. Schrimpf, Daniel M. Fleetwood
Charge Trapping in Irradiated 3D Devices and ICs (Invited). IRPS (2024)
Daniel M. Fleetwood
Radiation Effects in AlGaN/GaN HEMTs and Ga2O3 Diodes. DRC (2023)
Sajal Islam, Aditha S. Senarath, Arijit Sengupta, En-xia Zhang, Dennis R. Ball, Daniel M. Fleetwood, Ronald D. Schrimpf, Esmat Farzana, Arkka Bhattacharyya, Nolan S. Hendricks, James S. Speck
Single-Event Burnout by Cf-252 Irradiation in Vertical $\beta$-Ga2O3 Diodes with Pt and PtOx Schottky Contacts and High Permittivity Dielectric Field Plate. DRC (2023)
Peng Wang, En-xia Zhang, Daniel M. Fleetwood, Peng Fei Wang, Michael W. McCurdy, Ji-Tzouh Lin, Michael L. Alles, Jim L. Davidson, Bruce W. Alphenaar, Ronald D. Schrimpf
Effects of Charge Generation and Trapping on the X-ray Response of Strained AlGaN/GaN HEMTs. ASICON (2021)
Daniel M. Fleetwood
Reliability Limiting Defects in MOS Gate Oxides: Mechanisms and Modeling Implications. IRPS (2019)
Daniel M. Fleetwood
Border traps and bias-temperature instabilities in MOS devices. Microelectron. Reliab. 80 (2018)
Jianqun Yang, Xingji Li, Chaoming Liu, Daniel M. Fleetwood
The effect of ionization and displacement damage on minority carrier lifetime. Microelectron. Reliab. 82 (2018)
A. Sasikumar, Z. Zhang, P. Kumar, En-xia Zhang, Daniel M. Fleetwood, Ronald D. Schrimpf, Paul Saunier, Cathy Lee, S. A. Ringel, A. R. Arehart
Proton irradiation-induced traps causing VT instabilities and RF degradation in GaN HEMTs. IRPS (2015)
Cher Xuan Zhang, En-xia Zhang, Daniel M. Fleetwood, Michael L. Alles, Ronald D. Schrimpf, Chris Rutherglen, Kosmas Galatsis
Total-ionizing-dose effects and reliability of carbon nanotube FET devices. Microelectron. Reliab. 54 (11) (2014)
Nadia Rezzak, Pierre Maillard, Ronald D. Schrimpf, Michael L. Alles, Daniel M. Fleetwood, Yanfeng Albert Li
The impact of device width on the variability of post-irradiation leakage currents in 90 and 65 nm CMOS technologies. Microelectron. Reliab. 52 (11) (2012)
R. Arinero, En-xia Zhang, Nadia Rezzak, Ronald D. Schrimpf, Daniel M. Fleetwood, B. K. Choï, A. B. Hmelo, Julien Mekki, Antoine D. Touboul, Frédéric Saigné
High fluence 1.8 MeV proton irradiation effects on n-type MOS capacitors. Microelectron. Reliab. 51 (12) (2011)
Tania Roy, Yevgeniy S. Puzyrev, En-xia Zhang, Sandeepan DasGupta, Sarah A. Francis, Daniel M. Fleetwood, Ronald D. Schrimpf, Umesh K. Mishra, Jim S. Speck, Sokrates T. Pantelides
-rich conditions. Microelectron. Reliab. 51 (2) (2011)
Sokrates T. Pantelides, L. Tsetseris, M. J. Beck, S. N. Rashkeev, G. Hadjisavvas, I. G. Batyrev, B. R. Tuttle, A. G. Marinopoulos, X. J. Zhou, Daniel M. Fleetwood, Ronald D. Schrimpf
Performance, reliability, radiation effects, and aging issues in microelectronics - from atomic-scale physics to engineering-level modeling. ESSCIRC (2009)
Federico Faccio, Hugh J. Barnaby, Xiao J. Chen, Daniel M. Fleetwood, Laura Gonella, Michael L. McLain, Ronald D. Schrimpf
Total ionizing dose effects in shallow trench isolation oxides. Microelectron. Reliab. 48 (7) (2008)
Daniel M. Fleetwood, M. P. Rodgers, L. Tsetseris, X. J. Zhou, I. Batyrev, S. Wang, Ronald D. Schrimpf, Sokrates T. Pantelides
Effects of device aging on microelectronics radiation response and reliability. Microelectron. Reliab. 47 (7) (2007)
Sokrates T. Pantelides, L. Tsetseris, S. N. Rashkeev, X. J. Zhou, Daniel M. Fleetwood, Ronald D. Schrimpf
Hydrogen in MOSFETs - A primary agent of reliability issues. Microelectron. Reliab. 47 (6) (2007)
J. A. Felix, J. R. Schwank, Daniel M. Fleetwood, M. R. Shaneyfelt, Evgeni P. Gusev
Effects of radiation and charge trapping on the reliability of high-kappa gate dielectrics. Microelectron. Reliab. 44 (4) (2004)
Daniel M. Fleetwood
Hydrogen-related reliability issues for advanced microelectronics. Microelectron. Reliab. 42 (9-11) (2002)
Daniel M. Fleetwood
Effects of hydrogen transport and reactions on microelectronics radiation response and reliability. Microelectron. Reliab. 42 (4-5) (2002)