Antoine D. Touboul

Publication Activity (10 Years)

Years Active: 2011-2020
Publications (10 Years): 5

Top Topics

Predictive Model

Event Sequences

Calculation Method

Top Venues

Microelectron. Reliab.

Publications

Israel C. Lopes, Vincent Pouget, Frederic Wrobel, Frédéric Saigné, Antoine D. Touboul, Ketil Røed
Development and evaluation of a flexible instrumentation layer for system-level testing of radiation effects. LATS (2020)
Georgios Tsiligiannis, Antoine D. Touboul, Gaetan Bricas, Tadec Maraine, Jerome Boch, Frederic Wrobel, Alain Michez, Frédéric Saigné, Alain Godot, Asenath Etile, Thibaud Durand, Romain Sueur, Didier Farigoule, Philippe Girones
Evaluation and Analysis of Technologies for Robotic Platforms for the Nuclear Decommissioning. DTIS (2020)
S. Guagliardo, Frederic Wrobel, Ygor Q. Aguiar, J.-L. Autran, P. Leroux, Frédéric Saigné, Vincent Pouget, Antoine D. Touboul
Effect of Temperature on Single Event Latchup Sensitivity. DTIS (2020)
Ygor Q. Aguiar, Frederic Wrobel, J.-L. Autran, P. Leroux, Frédéric Saigné, Antoine D. Touboul, Vincent Pouget
Analysis of the charge sharing effect in the SET sensitivity of bulk 45 nm standard cell layouts under heavy ions. Microelectron. Reliab. (2018)
Frederic Wrobel, Antoine D. Touboul, Vincent Pouget, Luigi Dilillo, Jerome Boch, Frédéric Saigné
A calculation method to estimate single event upset cross section. Microelectron. Reliab. (2017)
Alain Michez, Jerome Boch, S. Dhombres, Frédéric Saigné, Antoine D. Touboul, J.-R. Vaillé, Laurent Dusseau, E. Lorfèvre, R. Ecoffet
Modeling dose effects in electronics devices: Dose and temperature dependence of power MOSFET. Microelectron. Reliab. 53 (9-11) (2013)
K. Guetarni, Antoine D. Touboul, Jerome Boch, L. Foro, A. Privat, Alain Michez, J.-R. Vaillé, Frédéric Saigné
Transient device simulation of neutron-induced failure in IGBT: A first step for developing a compact predictive model. Microelectron. Reliab. 53 (9-11) (2013)
Antoine D. Touboul, L. Foro, Frederic Wrobel, Frédéric Saigné
On the reliability assessment of trench fieldstop IGBT under atmospheric neutron spectrum. Microelectron. Reliab. 52 (1) (2012)
Georgios Tsiligiannis, Luigi Dilillo, Alberto Bosio, Patrick Girard, Aida Todri, Arnaud Virazel, Antoine D. Touboul, Frederic Wrobel, Frédéric Saigné
Evaluation of test algorithms stress effect on SRAMs under neutron radiation. IOLTS (2012)
R. Arinero, En-xia Zhang, Nadia Rezzak, Ronald D. Schrimpf, Daniel M. Fleetwood, B. K. Choï, A. B. Hmelo, Julien Mekki, Antoine D. Touboul, Frédéric Saigné
High fluence 1.8 MeV proton irradiation effects on n-type MOS capacitors. Microelectron. Reliab. 51 (12) (2011)