High fluence 1.8 MeV proton irradiation effects on n-type MOS capacitors.

R. Arinero En-xia Zhang Nadia Rezzak Ronald D. Schrimpf Daniel M. Fleetwood B. K. Choï A. B. Hmelo Julien Mekki Antoine D. Touboul Frédéric Saigné

Published in: Microelectron. Reliab. (2011)

Keyphrases