En-xia Zhang

Publication Activity (10 Years)

Years Active: 2008-2023
Publications (10 Years): 3

Top Topics

Monte Carlo Simulation

Structuring Elements

Top Venues

Microelectron. Reliab.

Publications

Sajal Islam, Aditha S. Senarath, Arijit Sengupta, En-xia Zhang, Dennis R. Ball, Daniel M. Fleetwood, Ronald D. Schrimpf, Esmat Farzana, Arkka Bhattacharyya, Nolan S. Hendricks, James S. Speck
Single-Event Burnout by Cf-252 Irradiation in Vertical $\beta$-Ga2O3 Diodes with Pt and PtOx Schottky Contacts and High Permittivity Dielectric Field Plate. DRC (2023)
Peng Wang, En-xia Zhang, Daniel M. Fleetwood, Peng Fei Wang, Michael W. McCurdy, Ji-Tzouh Lin, Michael L. Alles, Jim L. Davidson, Bruce W. Alphenaar, Ronald D. Schrimpf
Effects of Charge Generation and Trapping on the X-ray Response of Strained AlGaN/GaN HEMTs. ASICON (2021)
A. Sasikumar, Z. Zhang, P. Kumar, En-xia Zhang, Daniel M. Fleetwood, Ronald D. Schrimpf, Paul Saunier, Cathy Lee, S. A. Ringel, A. R. Arehart
Proton irradiation-induced traps causing VT instabilities and RF degradation in GaN HEMTs. IRPS (2015)
Cher Xuan Zhang, En-xia Zhang, Daniel M. Fleetwood, Michael L. Alles, Ronald D. Schrimpf, Chris Rutherglen, Kosmas Galatsis
Total-ionizing-dose effects and reliability of carbon nanotube FET devices. Microelectron. Reliab. 54 (11) (2014)
R. Arinero, En-xia Zhang, Nadia Rezzak, Ronald D. Schrimpf, Daniel M. Fleetwood, B. K. Choï, A. B. Hmelo, Julien Mekki, Antoine D. Touboul, Frédéric Saigné
High fluence 1.8 MeV proton irradiation effects on n-type MOS capacitors. Microelectron. Reliab. 51 (12) (2011)
Tania Roy, Yevgeniy S. Puzyrev, En-xia Zhang, Sandeepan DasGupta, Sarah A. Francis, Daniel M. Fleetwood, Ronald D. Schrimpf, Umesh K. Mishra, Jim S. Speck, Sokrates T. Pantelides
-rich conditions. Microelectron. Reliab. 51 (2) (2011)
Wei He, Zheng-xuan Zhang, En-xia Zhang, Wenjie Yu, Hao Tian, Xi Wang
Practical considerations in the design of SRAM cells on SOI. Microelectron. J. 39 (12) (2008)