Daniel J. Lichtenwalner

Publication Activity (10 Years)

Years Active: 2018-2024
Publications (10 Years): 11

Top Topics

Positive And Negative

Friendly Interface

High Temperature

Training Instances

Top Venues

Publications

Ayan K. Biswas, Daniel J. Lichtenwalner, Jae-Hyung Park, Brett Hull, Satyaki Ganguly, Donald A. Gajewski, Elif Balkas
Hole-Induced Threshold Voltage Instability Under High Positive and Negative Gate Stress in SiC MOSFETs. IRPS (2024)
Philipp Steinmann, Daniel J. Lichtenwalner, Shane Stein, Jae-Hyung Park, Suman Das, Sei-Hyung Ryu
Measurement of the $D_{it}$ Changes Under BTI-Stress in 4H-SiC FETs Using the Subthreshold Slope Method. IRPS (2024)
S. R. Stein, J. Kim, S. Das, Daniel J. Lichtenwalner, S. Ryu
Characterization of Interface Trap Density in SiC MOSFETs Subjected to High Voltage Gate Stress. IRPS (2024)
In-Hwan Ji, Anoop Mathew, Jae-Hyung Park, Neal Oldham, Matthew McCain, Shadi Sabri, Edward Van Brunt, Brett Hull, Daniel J. Lichtenwalner, Donald A. Gajewski, John W. Palmour
High Temperature and High Humidity Reliability Evaluation of Large-Area 1200V and 1700V SiC Diodes. IRPS (2023)
Arman Ur Rashid, Britt Brooks, Steven Manz, Daniel J. Lichtenwalner, Sei-Hyung Ryu
Modeling of the Snappy, and Soft Reverse Recovery of SiC MOSFET's Body Diode. BCICTS (2023)
Edward Van Brunt, Daniel J. Lichtenwalner, J. H. Park, Satyaki Ganguly, J. W. McPherson
Lifetime Modeling of the 4H-SiC MOS Interface in the HTRB Condition Under the Influence of Screw Dislocations. IRPS (2023)
Satyaki Ganguly, Daniel J. Lichtenwalner, Caleb Isaacson, Donald A. Gajewski, Philipp Steinmann, Ryan Foarde, Brett Hull, Sei-Hyung Ryu, Scott Allen, John W. Palmour
Negative Gate Bias TDDB evaluation of n-Channel SiC Vertical Power MOSFETs. IRPS (2022)
James P. Ashton, Patrick M. Lenahan, Daniel J. Lichtenwalner, Aivars J. Lelis
Leakage Currents and E' Centers in 4H-SiC MOSFETs with Barium Passivation. IRPS (2020)
James P. Ashton, Patrick M. Lenahan, Daniel J. Lichtenwalner, Aivars J. Lelis, Mark A. Anders
Reliability and Performance Issues in SiC MOSFETs: Insight Provided by Spin Dependent Recombination. IRPS (2019)
Daniel J. Lichtenwalner, Brett Hull, Edward Van Brunt, Shadi Sabri, Donald A. Gajewski, Dave Grider, Scott Allen, John W. Palmour, Akin Akturk, James McGarrity
Reliability studies of SiC vertical power MOSFETs. IRPS (2018)
Akin Akturk, James McGarrity, Neil Goldsman, Daniel J. Lichtenwalner, Brett Hull, Dave Grider, Richard Wilkins
The effects of radiation on the terrestrial operation of SiC MOSFETs. IRPS (2018)