Aivars J. Lelis

Publication Activity (10 Years)

Years Active: 2015-2020
Publications (10 Years): 7

Top Topics

Metal Oxide Semiconductor

Multiresolution

Field Effect Transistors

High Temperature

Top Venues

Microelectron. Reliab.

Publications

James P. Ashton, Patrick M. Lenahan, Daniel J. Lichtenwalner, Aivars J. Lelis
Leakage Currents and E' Centers in 4H-SiC MOSFETs with Barium Passivation. IRPS (2020)
Daniel B. Habersat, Aivars J. Lelis, Ronald Green
Towards a Robust Approach to Threshold Voltage Characterization and High Temperature Gate Bias Qualification. IRPS (2020)
James P. Ashton, Patrick M. Lenahan, Daniel J. Lichtenwalner, Aivars J. Lelis, Mark A. Anders
Reliability and Performance Issues in SiC MOSFETs: Insight Provided by Spin Dependent Recombination. IRPS (2019)
Daniel B. Habersat, Ronald Green, Aivars J. Lelis
Permanent and Transient Effects of High-Temperature Bias Stress on Room- Temperature $V_{T}$ Drift Measurements in SiC Power MOSFETs. IRPS (2019)
Patrick M. Lenahan, Mark A. Anders, R. J. Waskiewicz, Aivars J. Lelis
Bias temperature instabilities in 4H SiC metal oxide semiconductor field effect transistors: Insight provided by electrically detected magnetic resonance. Microelectron. Reliab. 81 (2018)
Daniel B. Habersat, Aivars J. Lelis, Ronald Green
Measurement considerations for evaluating BTI effects in SiC MOSFETs. Microelectron. Reliab. 81 (2018)
Mark A. Anders, Patrick M. Lenahan, Aivars J. Lelis
Negative bias instability in 4H-SiC MOSFETS: Evidence for structural changes in the SiC. IRPS (2015)