Daniel B. Habersat

Publication Activity (10 Years)

Years Active: 2018-2024
Publications (10 Years): 4

Top Topics

High Temperature

Top Venues

Microelectron. Reliab.

Publications

Jonathan Schuster, Michael A. Derenge, Jeremy L. Smith, Gregory A. Garrett, Daniel B. Habersat, Brenda VanMil, Dina M. Bower, Shahid Aslam, Tilak Hewagama, Michael Wraback, Anand V. Sampath
NUV-Enhanced 4H-SiC SACM APDs. DRC (2024)
Daniel B. Habersat, Aivars J. Lelis, Ronald Green
Towards a Robust Approach to Threshold Voltage Characterization and High Temperature Gate Bias Qualification. IRPS (2020)
Daniel B. Habersat, Ronald Green, Aivars J. Lelis
Permanent and Transient Effects of High-Temperature Bias Stress on Room- Temperature $V_{T}$ Drift Measurements in SiC Power MOSFETs. IRPS (2019)
Daniel B. Habersat, Aivars J. Lelis, Ronald Green
Measurement considerations for evaluating BTI effects in SiC MOSFETs. Microelectron. Reliab. 81 (2018)