Satyaki Ganguly

Publication Activity (10 Years)

Years Active: 2018-2024
Publications (10 Years): 7

Top Topics

Compression Rate

High Efficiency

Reliability Assessment

Positive And Negative

Top Venues

Microelectron. Reliab.

Publications

Ayan K. Biswas, Daniel J. Lichtenwalner, Jae-Hyung Park, Brett Hull, Satyaki Ganguly, Donald A. Gajewski, Elif Balkas
Hole-Induced Threshold Voltage Instability Under High Positive and Negative Gate Stress in SiC MOSFETs. IRPS (2024)
Yueying Liu, John Wood, Zongyang Hu, Satyaki Ganguly, Jeremy Fisher, Mike Watts, Scott T. Sheppard, Donald A. Gajewski, Basim Noori
GaN HEMTs Design and Modeling for 5G. IRPS (2023)
Edward Van Brunt, Daniel J. Lichtenwalner, J. H. Park, Satyaki Ganguly, J. W. McPherson
Lifetime Modeling of the 4H-SiC MOS Interface in the HTRB Condition Under the Influence of Screw Dislocations. IRPS (2023)
Satyaki Ganguly, Kyle M. Bothe, Alexandre Niyonzima, Thomas Smith, Yueying Liu, Jeremy Fisher, Fabian Radulescu, Donald A. Gajewski, Scott T. Sheppard, Jim W. Milligan, Basim Noori, John W. Palmour
DC and RF Reliability Assessment of 5G-MMW capable GaN HEMT Process (Invited). IRPS (2022)
Satyaki Ganguly, Daniel J. Lichtenwalner, Caleb Isaacson, Donald A. Gajewski, Philipp Steinmann, Ryan Foarde, Brett Hull, Sei-Hyung Ryu, Scott Allen, John W. Palmour
Negative Gate Bias TDDB evaluation of n-Channel SiC Vertical Power MOSFETs. IRPS (2022)
Bruce Schmukler, Jeffrey Barner, Jeremy Fisher, Donald A. Gajewski, Scott T. Sheppard, Jim W. Milligan, Kyle M. Bothe, Satyaki Ganguly, Terry Alcorn, Jennifer Gao, Chris Hardiman, Evan Jones, Dan Namishia, Fabian Radulescu
A High Efficiency, Ka-Band, GaN-on-SiC MMIC with Low Compression. BCICTS (2019)
Donald A. Gajewski, Satyaki Ganguly, Scott T. Sheppard, Simon Wood, Jeff B. Barner, Jim W. Milligan, John Palmour
Reliability comparison of 28V-50V GaN-on-SiC S-band and X-band technologies. Microelectron. Reliab. 84 (2018)