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Characterization of Interface Trap Density in SiC MOSFETs Subjected to High Voltage Gate Stress.
S. R. Stein
J. Kim
S. Das
Daniel J. Lichtenwalner
S. Ryu
Published in:
IRPS (2024)
Keyphrases
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high voltage
operating conditions
user interface
partial discharge
user friendly
normal operation
data mining
case based reasoning