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Characterization of Interface Trap Density in SiC MOSFETs Subjected to High Voltage Gate Stress.

S. R. SteinJ. KimS. DasDaniel J. LichtenwalnerS. Ryu
Published in: IRPS (2024)
Keyphrases
  • high voltage
  • operating conditions
  • user interface
  • partial discharge
  • user friendly
  • normal operation
  • data mining
  • case based reasoning