Anant K. Agarwal

Publication Activity (10 Years)

Years Active: 1992-2024
Publications (10 Years): 13

Top Topics

Silicon Dioxide

Leakage Current

Highly Reliable

Fully Integrated

Top Venues

Publications

Limeng Shi, Jiashu Qian, Michael Jin, Monikuntala Bhattacharya, Hengyu Yu, Marvin H. White, Anant K. Agarwal, Atsushi Shimbori
Evaluation of Burn-in Technique on Gate Oxide Reliability in Commercial SiC MOSFETs. IRPS (2024)
Jiashu Qian, Limeng Shi, Michael Jin, Monikuntala Bhattacharya, Hengyu Yu, Marvin H. White, Anant K. Agarwal, Atsushi Shimbori, Tianshi Liu, Shengnan Zhu
Investigation of the Electron Trapping in Commercial Thick Silicon Dioxides Thermally Grown on 4H-SiC under the Constant Current Stress. IRPS (2024)
Limeng Shi, Shengnan Zhu, Jiashu Qian, Michael Jin, Monikuntala Bhattacharya, Marvin H. White, Anant K. Agarwal, Atsushi Shimbori, Tianshi Liu
Investigation of different screening methods on threshold voltage and gate oxide lifetime of SiC Power MOSFETs. IRPS (2023)
Shengnan Zhu, Limeng Shi, Michael Jin, Jiashu Qian, Monikuntala Bhattacharya, Hema Lata Rao Maddi, Marvin H. White, Anant K. Agarwal, Tianshi Liu, Atsushi Shimbori, Chingchi Chen
Reliability Comparison of Commercial Planar and Trench 4H-SiC Power MOSFETs. IRPS (2023)
Emran K. Ashik, Sundar Babu Isukapati, Hua Zhang, Tianshi Liu, Utsav Gupta, Adam J. Morgan, Veena Misra, Woongje Sung, Ayman A. Fayed, Anant K. Agarwal, Bongmook Lee
Bias Temperature Instability on SiC n- and p-MOSFETs for High Temperature CMOS Applications. IRPS (2022)
Hua Zhang, Tianshi Liu, Utsav Gupta, Sundar Babu Isukapati, Emran K. Ashik, Adam J. Morgan, Bongmook Lee, Woongje Sung, Anant K. Agarwal, Ayman A. Fayed
A 600V Half-Bridge Power Stage Fully Integrated with 25V Gate-Drivers in SiC CMOS Technology. MWSCAS (2022)
Robert Stahlbush, Nadeemullah A. Mahadik, Peter Bonanno, Jake Soto, Bruce Odekirk, Woongje Sung, Anant K. Agarwal
Defects in 4H-SiC epilayers affecting device yield and reliability. IRPS (2022)
Susanna Yu, Marvin H. White, Anant K. Agarwal
Experimental Determination of Interface Trap Density and Fixed Positive Oxide Charge in Commercial 4H-SiC Power MOSFETs. IEEE Access 9 (2021)
Shengnan Zhu, Tianshi Liu, Marvin H. White, Anant K. Agarwal, Arash Salemi, David Sheridan
Investigation of Gate Leakage Current Behavior for Commercial 1.2 kV 4H-SiC Power MOSFETs. IRPS (2021)
Tianshi Liu, Hua Zhang, Sundar Babu Isukapati, Emaran Ashik, Adam J. Morgan, Bongmook Lee, Woongje Sung, Marvin H. White, Ayman A. Fayed, Anant K. Agarwal
SPICE Modeling and CMOS Circuit Development of a SiC Power IC Technology. MWSCAS (2021)
Tianshi Liu, Shengnan Zhu, Susanna Yu, Diang Xing, Arash Salemi, Minseok Kang, Kristen Booth, Marvin H. White, Anant K. Agarwal
Gate Oxide Reliability Studies of Commercial 1.2 kV 4H-SiC Power MOSFETs. IRPS (2020)
Susanna Yu, Tianshi Liu, Shengnan Zhu, Diang Xing, Arash Salemi, Minseok Kang, Kristen Booth, Marvin H. White, Anant K. Agarwal
Threshold Voltage Instability of Commercial 1.2 kV SiC Power MOSFETs. IRPS (2020)
Diang Xing, Tianshi Liu, Susanna Yu, Minseok Kang, Arash Salemi, Marvin H. White, Anant K. Agarwal
Design Strategies for Rugged SiC Power Devices. IRPS (2019)
Vineeta Agrawal, Anant K. Agarwal, Krishna Kant
A study of single-phase to three-phase cycloconverters using PSPICE. IEEE Trans. Ind. Electron. 39 (2) (1992)