Reliability Comparison of Commercial Planar and Trench 4H-SiC Power MOSFETs.
Shengnan ZhuLimeng ShiMichael JinJiashu QianMonikuntala BhattacharyaHema Lata Rao MaddiMarvin H. WhiteAnant K. AgarwalTianshi LiuAtsushi ShimboriChingchi ChenPublished in: IRPS (2023)