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Near-ideal Ru/N-polar GaN Schottky diode with ultralow reverse leakage.

Wenjian LiuIslam SayedBrian RomanczykNirupam HatuiJana GeorgievaHaoran LiStacia KellerUmesh K. Mishra
Published in: DRC (2020)
Keyphrases
  • computer simulation
  • fourier transform
  • frequency domain
  • rotation invariant
  • power supply
  • signal analysis
  • computer vision
  • multiresolution
  • gray scale
  • design methodology
  • high density
  • schottky barrier