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Reduction of Saturation Voltage in InGaAs-Channel/lnGaN-Drain Vertical FETs and the role of traps at the InGaAs/lnGaN junction.

Shalini LalJing LuBrian J. ThibeaultMan Hoi WongChris G. Van de WalleSteven P. DenBaarsUmesh K. Mishra
Published in: DRC (2019)
Keyphrases
  • communication channels
  • high voltage
  • multi channel
  • database
  • power system
  • communication systems
  • channel capacity
  • data sets
  • information systems
  • reduction method
  • early warning