Jungwoo Joh

Publication Activity (10 Years)

Years Active: 2009-2024
Publications (10 Years): 5

Top Venues

IRPS

WISA

Massachusetts Institute of Technology, Cambridge, MA, USA (PHD)

Education History

Massachusetts Institute of Technology, Cambridge, MA, USA

PHD

Publications

Sandeep R. Bahl, Jungwoo Joh, Fei Yang
Mission Profile Approach for the Calculation of GaN FET Reliability in Power Supply Applications (Invited). IRPS (2024)
Ethan S. Lee, Jungwoo Joh, Dong-Seup Lee, Jesús A. del Alamo
Impact of Gate Offset on PBTI of p-GaN Gate HEMTs. IRPS (2022)
Young-Joon Park, Jungwoo Joh, Jayhoon Chung, Srikanth Krishnan
Current Crowding Impact on Electromigration in Al Interconnects. IRPS (2019)
Ethan S. Lee, Luis Hurtado, Jungwoo Joh, Srikanth Krishnan, Sameer Pendharkar, Jesús A. del Alamo
Time-Dependent Dielectric Breakdown Under AC Stress in GaN MIS-HEMTs. IRPS (2019)
Jungwoo Joh, Yezee Seo, Hoon-Kyu Kim, Taekyoung Kwon
Glitch Recall: A Hardware Trojan Exploiting Natural Glitches in Logic Circuits. WISA (2017)
Jungwoo Joh, Jesús A. del Alamo
Impact of gate placement on RF power degradation in GaN high electron mobility transistors. Microelectron. Reliab. 52 (1) (2012)
Jungwoo Joh, Jesús A. del Alamo, Kurt Langworthy, Sujing Xie, Tsvetanka Zheleva
Role of stress voltage on structural degradation of GaN high-electron-mobility transistors. Microelectron. Reliab. 51 (2) (2011)
Sefa Demirtas, Jungwoo Joh, Jesús A. del Alamo
High voltage degradation of GaN High Electron Mobility Transistors on silicon substrate. Microelectron. Reliab. 50 (6) (2010)
Jungwoo Joh, Feng Gao, Tomás Palacios, Jesús A. del Alamo
A model for the critical voltage for electrical degradation of GaN high electron mobility transistors. Microelectron. Reliab. 50 (6) (2010)
Jesús A. del Alamo, Jungwoo Joh
GaN HEMT reliability. Microelectron. Reliab. 49 (9-11) (2009)

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Publication Activity (10 Years)

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Jungwoo Joh