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Boron-Doped Aluminum Nitride Ferroelectric Field-Effect Transistors with ZnO Semiconductor Channel.

Quyen TranJohn HaydenJoseph CasamentoJon-Paul MariaThomas N. Jackson
Published in: DRC (2024)
Keyphrases
  • field effect transistors
  • thin film
  • high density
  • room temperature
  • schottky barrier
  • semiconductor devices
  • steady state
  • mathematical analysis
  • plasma etching
  • data center
  • silicon nitride
  • data sets
  • databases