Taiichi Otsuji

Publication Activity (10 Years)

Years Active: 1988-2024
Publications (10 Years): 7

Top Topics

False Positives

Physical Characteristics

Field Effect Transistors

Top Venues

Publications

Chao Tang, Koichi Tamura, Aoi Hamada, Hiroyoshi Kudo, Shinnosuke Uchigasaki, Yuma Takida, Hiroaki Minamide, Tsung-Tse Lin, Akira Satou, Taiichi Otsuji
Bi2Se3/h-BN Heterostructure Rectenna for fast and Sensitive THz Detection. DRC (2024)
D. Nakajima, K. Nishimura, M. Watanabe, T. T. Lin, Keisuke Kasai, Masato Yoshida, Tetsuya Suemitsu, Taiichi Otsuji, Akira Satou
Conversion Gain Enhancement of a UTC-PD-Integrated HEMT Photonic Double-Mixer by High-Intensity Optical Subcarrier Signal. OFC (2023)
Michael S. Shur, Gregory Aizin, Taiichi Otsuji, Victor Ryzhii
Plasmonic Field-Effect Transistors (TeraFETs) for 6G Communications. Sensors 21 (23) (2021)
Taiichi Otsuji, Katsumi Iwatsuki, Hirohito Yamada, Masafumi Yashima
Concept of Resilient Electric Power and Information Communication Technology (R-EICT) Converged Network Systems Based on Overall Optimization of Autonomous Decentralized Cooperative Control of DC Microgrids. ISGT (2021)
Koichi Tamura, Daichi Ogiura, Kento Suwa, Hirokazu Fukidome, Akira Satou, Yuma Takida, Hiroaki Minamide, Taiichi Otsuji
Fast terahertz detection by asymmetric dual-grating-gate graphene FET. DRC (2021)
Yuya Omori, Tomotaka Hosotani, Taiichi Otsuji, Katsumi Iwatsuki, Akira Satou
UTC-PD-Integrated HEMT for Optical-to-Millimeter-Wave Carrier Frequency Down-Conversion. OFC (2019)
Stephane Boubanga-Tombet, Deepika Yadav, Wojciech Knap, Vyacheslav V. Popov, Taiichi Otsuji
Graphene-Channel-Transistor Terahertz Amplifier. DRC (2018)
Kenta Sugawara, Tetsuya Kawasaki, Gen Tamamushi, Mastura B. Hussin, Adrian Dobroiu, Tomohiro Yoshida, Tetsuya Suemitsu, Hirokazu Fukidome, Maki Suemitsu, Victor Ryzhii, Katsumi Iwatsuki, Shigeru Kuwano, Junichi Kani, Jun Terada, Taiichi Otsuji
Sub-THz photonic frequency conversion using graphene and InP-based transistors for future fully coherent access network. ECOC (2015)
Tetsuya Kawasaki, Adrian Dobroiu, Takanori Eto, Yuki Kurita, Kazuki Kojima, Yuhei Yabe, Hiroki Sugiyama, Takayuki Watanabe, Susumu Takabayashi, Tetsuya Suemitsu, Victor Ryzhii, Katsumi Iwatsuki, Taiichi Otsuji, Youichi Fukada, Junichi Kani, Jun Terada, Naoto Yoshimoto
Graphene-channel FETs for photonic frequency double-mixing conversion over the sub-THz band. ESSDERC (2013)
Tomohiro Yoshida, Kengo Kobayashi, Taiichi Otsuji, Tetsuya Suemitsu
Impact of T-gate stem height on parasitic gate delay time in InGaAs-HEMTs. ESSDERC (2013)
Hirokazu Fukidome, Yusuke Kawai, Hiroyuki Handa, Hiroki Hibino, Hidetoshi Miyashita, Masato Kotsugi, Takuo Ohkochi, Myung-Ho Jung, Tetsuya Suemitsu, Toyohiko Kinoshita, Taiichi Otsuji, Maki Suemitsu
Site-Selective Epitaxy of Graphene on Si Wafers. Proc. IEEE 101 (7) (2013)
Myung-Ho Jung, Goon-Ho Park, Tomohiro Yoshida, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji, Maki Suemitsu
High-Performance Graphene Field-Effect Transistors With Extremely Small Access Length Using Self-Aligned Source and Drain Technique. Proc. IEEE 101 (7) (2013)
Amine el Moutaouakil, Tsuneyoshi Komori, Kouhei Horiike, Tetsuya Suemitsu, Taiichi Otsuji
Room Temperature Intense Terahertz Emission from a Dual Grating Gate Plasmon-Resonant Emitter Using InAlAs/InGaAs/InP Material Systems. IEICE Trans. Electron. (8) (2010)
Takuya Nishimura, Nobuhiro Magome, HyunChul Kang, Taiichi Otsuji
Spectral Narrowing Effect of a Novel Super-Grating Dual-Gate Structure for Plasmon-Resonant Terahertz Emitter. IEICE Trans. Electron. (5) (2009)
Mitsuhiro Hanabe, Yahya Moubarak Meziani, Taiichi Otsuji, Eiichi Sano, Tanemasa Asano
Possibility of Terahertz Injection-Locked Oscillation in an InGaP/InGaAs/GaAs Two-Dimensional Plasmon-Resonant Photomixer. IEICE Trans. Electron. (5) (2007)
Mitsuhiro Hanabe, Takuya Nishimura, Masaki Miyamoto, Taiichi Otsuji, Eiichi Sano
Structure-Sensitive Design for Wider Tunable Operation of Terahertz Plasmon-Resonant Photomixer. IEICE Trans. Electron. (7) (2006)
Takuya Nishimura, Mitsuhiro Hanabe, Masaki Miyamoto, Taiichi Otsuji, Eiichi Sano
Terahertz Frequency Multiplier Operation of Two Dimensional Plasmon Resonant Photomixer. IEICE Trans. Electron. (7) (2006)
Kimikazu Sano, Koichi Murata, Taiichi Otsuji, Tomoyuki Akeyoshi, Naofumi Shimizu, Eiichi Sano
An 80-Gb/s optoelectronic delayed flip-flop IC using resonant tunneling diodes and uni-traveling-carrier photodiode. IEEE J. Solid State Circuits 36 (2) (2001)
Koichi Murata, Taiichi Otsuji, Yuhki Imai, Suehiro Sugitani
A distributed selector IC using GaAs MESFET's with multilayer-interconnection structure. IEEE J. Solid State Circuits 35 (2) (2000)
Shunji Kimura, Taiichi Otsuji, Hiroyuki Kikuchi, Koichi Murata, Eiichi Sano
Circuit design technologies for high-speed lightwave communications beyond 40 Gbit/s. ISCAS (2) (1999)
Yutaka Miyamoto, Mikio Yoneyama, Taiichi Otsuji, Kazushige Yonenaga, Naofumi Shimizu
40-Gbit/s TDM transmission technologies based on ultra-high-speed ICs. IEEE J. Solid State Circuits 34 (9) (1999)
Taiichi Otsuji, Koichi Murata, Takatomo Enoki, Yohtaro Umeda
An 80-Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMTs. IEEE J. Solid State Circuits 33 (9) (1998)
Kimikazu Sano, Koichi Narahara, Koichi Murata, Taiichi Otsuji, Kiyomitsu Onodera
High-speed GaAs MESFET Digital IC Design for Optical Communication Systems. ASP-DAC (1998)
Koichi Murata, Taiichi Otsuji, Mikio Yoneyama, Masami Tokumitsu
A 40-Gbit/s superdynamic decision IC fabricated with 0.12-μm GaAs MESFET's. IEEE J. Solid State Circuits 33 (10) (1998)
Taiichi Otsuji, Yuhki Imai, Eiichi Sano, Shunji Kimura, Satoshi Yamaguchi, Mikio Yoneyama, Takatomo Enoki, Yohtaro Umeda
40-Gb/s ICs for future lightwave communications systems. IEEE J. Solid State Circuits 32 (9) (1997)
Taiichi Otsuji, Mikio Yoneyama, Koichi Murata, Eiichi Sano
A super-dynamic flip-flop circuit for broad-band applications up to 24 Gb/s utilizing production-level 0.2-μm GaAs MESFETs. IEEE J. Solid State Circuits 32 (9) (1997)
Koichi Murata, Taiichi Otsuji, Eiichi Sano, Masanobu Ohhata, Minoru Togashi, Masao Suzuki
A novel high-speed latching operation flip-flop (HLO-FF) circuit and its application to a 19-Gb/s decision circuit using a 0.2-μm GaAs MESFET. IEEE J. Solid State Circuits 30 (10) (1995)
Taiichi Otsuji
A Picosecond Accuracy Timing Error Compensation Technique in TDR Measurement. ITC (1991)
Teruo Tamama, Naoaki Narumi, Taiichi Otsuji, Masao Suzuki, Tsuneta Sudo
Key Technologies for 500 MHz VLSI Test System "ULTIMATE". ITC (1988)