Tetsuya Suemitsu

Publication Activity (10 Years)

Years Active: 2002-2023
Publications (10 Years): 1

Top Topics

Field Effect Transistors

Frequency Spectrum

Schottky Barrier

Top Venues

IEICE Electron. Express

Publications

D. Nakajima, K. Nishimura, M. Watanabe, T. T. Lin, Keisuke Kasai, Masato Yoshida, Tetsuya Suemitsu, Taiichi Otsuji, Akira Satou
Conversion Gain Enhancement of a UTC-PD-Integrated HEMT Photonic Double-Mixer by High-Intensity Optical Subcarrier Signal. OFC (2023)
Kenta Sugawara, Tetsuya Kawasaki, Gen Tamamushi, Mastura B. Hussin, Adrian Dobroiu, Tomohiro Yoshida, Tetsuya Suemitsu, Hirokazu Fukidome, Maki Suemitsu, Victor Ryzhii, Katsumi Iwatsuki, Shigeru Kuwano, Junichi Kani, Jun Terada, Taiichi Otsuji
Sub-THz photonic frequency conversion using graphene and InP-based transistors for future fully coherent access network. ECOC (2015)
Tetsuya Suemitsu
InP and GaN high electron mobility transistors for millimeter-wave applications. IEICE Electron. Express 12 (13) (2015)
Tetsuya Kawasaki, Adrian Dobroiu, Takanori Eto, Yuki Kurita, Kazuki Kojima, Yuhei Yabe, Hiroki Sugiyama, Takayuki Watanabe, Susumu Takabayashi, Tetsuya Suemitsu, Victor Ryzhii, Katsumi Iwatsuki, Taiichi Otsuji, Youichi Fukada, Junichi Kani, Jun Terada, Naoto Yoshimoto
Graphene-channel FETs for photonic frequency double-mixing conversion over the sub-THz band. ESSDERC (2013)
Tomohiro Yoshida, Kengo Kobayashi, Taiichi Otsuji, Tetsuya Suemitsu
Impact of T-gate stem height on parasitic gate delay time in InGaAs-HEMTs. ESSDERC (2013)
Hirokazu Fukidome, Yusuke Kawai, Hiroyuki Handa, Hiroki Hibino, Hidetoshi Miyashita, Masato Kotsugi, Takuo Ohkochi, Myung-Ho Jung, Tetsuya Suemitsu, Toyohiko Kinoshita, Taiichi Otsuji, Maki Suemitsu
Site-Selective Epitaxy of Graphene on Si Wafers. Proc. IEEE 101 (7) (2013)
Myung-Ho Jung, Goon-Ho Park, Tomohiro Yoshida, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji, Maki Suemitsu
High-Performance Graphene Field-Effect Transistors With Extremely Small Access Length Using Self-Aligned Source and Drain Technique. Proc. IEEE 101 (7) (2013)
Amine el Moutaouakil, Tsuneyoshi Komori, Kouhei Horiike, Tetsuya Suemitsu, Taiichi Otsuji
Room Temperature Intense Terahertz Emission from a Dual Grating Gate Plasmon-Resonant Emitter Using InAlAs/InGaAs/InP Material Systems. IEICE Trans. Electron. (8) (2010)
Tetsuya Suemitsu, Masami Tokumitsu
InP HEMT Technology for High-Speed Logic and Communications. IEICE Trans. Electron. (5) (2007)
Ryohei Urata, Ryo Takahashi, Tetsuya Suemitsu, Hiroyuki Suzuki
An optically clocked transistor array (OCTA) for 40-Gb/s, bidirectional serial-to-parallel conversion of asynchronous burst optical packets. IEICE Electron. Express 3 (7) (2006)
Tetsuya Suemitsu, Yoshino K. Fukai, Masami Tokumitsu, Fabiana Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni
Improved stability in wide-recess InP HEMTs by means of a fully passivated two-step-recess gate. IEICE Electron. Express 3 (13) (2006)
Tetsuya Suemitsu, Yoshino K. Fukai, Hiroki Sugiyama, Kazuo Watanabe, Haruki Yokoyama
Bias-stress-induced increase in parasitic resistance of InP-based InAlAs/InGaAs HEMTs. Microelectron. Reliab. 42 (1) (2002)