Haruki Yokoyama

Publication Activity (10 Years)

Years Active: 2002-2023
Publications (10 Years): 12

Top Topics

Data Distribution

Newly Developed

Semantic Knowledge

Risk Assessment

Top Venues

Publications

Satoshi Munakata, Caterina Urban, Haruki Yokoyama, Koji Yamamoto, Kazuki Munakata
Verifying Attention Robustness of Deep Neural Networks Against Semantic Perturbations. NFM (2023)
Zhijie Wang, Yuheng Huang, Lei Ma, Haruki Yokoyama, Susumu Tokumoto, Kazuki Munakata
An Exploratory Study of AI System Risk Assessment from the Lens of Data Distribution and Uncertainty. CoRR (2022)
Satoshi Munakata, Caterina Urban, Haruki Yokoyama, Koji Yamamoto, Kazuki Munakata
Verifying Attention Robustness of Deep Neural Networks against Semantic Perturbations. CoRR (2022)
Satoshi Munakata, Caterina Urban, Haruki Yokoyama, Koji Yamamoto, Kazuki Munakata
Verifying Attention Robustness of Deep Neural Networks against Semantic Perturbations. APSEC (2022)
Kunihiro Noda, Haruki Yokoyama, Shinji Kikuchi
Sirius: Static Program Repair with Dependence Graph-Based Systematic Edit Patterns. ICSME (2021)
Kunihiro Noda, Haruki Yokoyama, Shinji Kikuchi
Sirius: Static Program Repair with Dependence Graph-Based Systematic Edit Patterns. CoRR (2021)
Haruki Yokoyama, Satoshi Onoue, Shinji Kikuchi
Towards Building Robust DNN Applications: An Industrial Case Study of Evolutionary Data Augmentation. ASE (2020)
Haruki Yokoyama
Machine Learning System Architectural Pattern for Improving Operational Stability. ICSA Companion (2019)
Akito Tanikado, Haruki Yokoyama, Masahiro Yamamoto, Soichi Sumi, Yoshiki Higo, Shinji Kusumoto
New Strategies for Selecting Reuse Candidates on Automated Program Repair. COMPSAC (2) (2017)
Haruki Yokoyama, Yoshiki Higo, Shinji Kusumoto
Evaluating Automated Program Repair Using Characteristics of Defects. IWESEP (2017)
Hiroki Nakajima, Yoshiki Higo, Haruki Yokoyama, Shinji Kusumoto
Toward Developer-like Automated Program Repair - Modification Comparisons between GenProg and Developers. APSEC (2016)
Haruki Yokoyama, Yoshiki Higo, Keisuke Hotta, Takafumi Ohta, Kozo Okano, Shinji Kusumoto
Toward improving ability to repair bugs automatically: a patch candidate location mechanism using code similarity. SAC (2016)
Yu Kurata, Yasuaki Hashizume, Shinichi Aozasa, Mikitaka Itoh, Toshikazu Hashimoto, Hiromasa Tanobe, Yasuhiko Nakanishi, Eiji Yoshida, Hiroyuki Fukuyama, Hiroshi Yamazaki, Takashi Goh, Haruki Yokoyama, Yoshifumi Muramoto
400-G coherent receiver using silica-based heterogeneously-integrated PLC with newly developed waveplate type PBS. ECOC (2014)
Masahiro Nada, Yoshifumi Muramoto, Haruki Yokoyama, Toshihide Yoshimatsu, Hideaki Matsuzaki
High-speed avalanche photodiodes for 100-Gb/s systems and beyond. ECOC (2014)
Atsushi Teranishi, Kaoru Shizuno, Safumi Suzuki, Masahiro Asada, Hiroki Sugiyama, Haruki Yokoyama
Fundamental oscillation up to 1.08THz in resonant tunneling diodes with high-indium-composition transit layers for reduction of transit delay. IEICE Electron. Express 9 (5) (2012)
Atsushi Teranishi, Safumi Suzuki, Kaoru Shizuno, Masahiro Asada, Hiroki Sugiyama, Haruki Yokoyama
Estimation of Transit Time in Terahertz Oscillating Resonant Tunneling Diodes with Graded Emitter and Thin Barriers. IEICE Trans. Electron. (3) (2012)
Naoteru Shigekawa, Kazumi Nishimura, Haruki Yokoyama, Kenji Shiojima, Kohji Hohkawa
Velocity dispersion in GaN-based surface acoustic wave filters on (0001) sapphire substrates. IEICE Electron. Express 2 (19) (2005)
Kazumi Nishimura, Naoteru Shigekawa, Haruki Yokoyama, Masanobu Hiroki, Kohji Hohkawa
SAW characteristics of GaN layers with surfaces exposed by dry etching. IEICE Electron. Express 2 (19) (2005)
Hideaki Matsuzaki, Hiroki Sugiyama, Haruki Yokoyama, Takashi Kobayashi, Takatomo Enoki
Suppression of short-channel effect in pseudomorphic In0.25Al0.75P/In0.75Ga0.25As high electron mobility transistors. IEICE Electron. Express 1 (11) (2004)
Tetsuya Suemitsu, Yoshino K. Fukai, Hiroki Sugiyama, Kazuo Watanabe, Haruki Yokoyama
Bias-stress-induced increase in parasitic resistance of InP-based InAlAs/InGaAs HEMTs. Microelectron. Reliab. 42 (1) (2002)