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Takatomo Enoki
Publication Activity (10 Years)
Years Active: 1997-2009
Publications (10 Years): 0
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Publications
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Toshihiko Kosugi
,
Hiroki Sugiyama
,
Koichi Murata
,
Hiroyuki Takahashi
,
Akihiko Hirata
,
Naoya Kukutsu
,
Yuichi Kado
,
Takatomo Enoki
A 125-GHz 140-mW InGaAs/InP composite-channel HEMT MMIC power amplifier module.
IEICE Electron. Express
6 (24) (2009)
Yoshino K. Fukai
,
Kenji Kurishima
,
Norihide Kashio
,
Minoru Ida
,
Shoji Yamahata
,
Takatomo Enoki
Emitter-metal-related degradation in InP-based HBTs operating at high current density and its suppression by refractory metal.
Microelectron. Reliab.
49 (4) (2009)
Koji Inafune
,
Eiichi Sano
,
Hideaki Matsuzaki
,
Toshihiko Kosugi
,
Takatomo Enoki
W-Band Active Integrated Antenna Oscillator Based on Full-Wave Design Methodology and 0.1-µm Gate InP-Based HEMTs.
IEICE Trans. Electron.
(7) (2006)
Hideaki Matsuzaki
,
Takashi Maruyama
,
Takatomo Enoki
,
Masami Tokumitsu
Novel Fabrication Technology for High Yield Sub-100-nm-Gate InP-Based HEMTs.
IEICE Trans. Electron.
(7) (2006)
Takatomo Enoki
Special Section on Heterostructure Microelectronics with TWHM2005.
IEICE Trans. Electron.
(7) (2006)
Kiyoshi Ishii
,
Hideyuki Nosaka
,
Kimikazu Sano
,
Koichi Murata
,
Minoru Ida
,
Kenji Kurishima
,
Michihiro Hirata
,
Tsugumichi Shibata
,
Takatomo Enoki
High-bit-rate low-power decision circuit using InP-InGaAs HBT technology.
IEEE J. Solid State Circuits
40 (7) (2005)
Hideaki Matsuzaki
,
Hiroki Sugiyama
,
Haruki Yokoyama
,
Takashi Kobayashi
,
Takatomo Enoki
Suppression of short-channel effect in pseudomorphic In0.25Al0.75P/In0.75Ga0.25As high electron mobility transistors.
IEICE Electron. Express
1 (11) (2004)
Koichi Murata
,
Kimikazu Sano
,
Hiroto Kitabayashi
,
Suehiro Sugitani
,
Hirohiko Sugahara
,
Takatomo Enoki
100-Gb/s multiplexing and demultiplexing IC operations in InP HEMT technology.
IEEE J. Solid State Circuits
39 (1) (2004)
Hideaki Matsuzaki
,
Kimikazu Sano
,
Takatomo Enoki
Low-power and High-speed SCFL-inverter Using Pseudomorphic InGaAs Channel High Electron Mobility Transistors.
IEICE Electron. Express
1 (2) (2004)
Hiroyuki Fukuyama
,
Kimikazu Sano
,
Koichi Murata
,
Hiroto Kitabayashi
,
Yasuro Yamane
,
Takatomo Enoki
,
Hirohiko Sugahara
Photoreceiver module using an InP HEMT transimpedance amplifier for over 40 gb/s.
IEEE J. Solid State Circuits
39 (10) (2004)
Hideyuki Nosaka
,
Eiichi Sano
,
Kiyoshi Ishii
,
Minoru Ida
,
Kenji Kurishima
,
Shoji Yamahata
,
Tsugumichi Shibata
,
Hiroyuki Fukuyama
,
Mikio Yoneyama
,
Takatomo Enoki
,
Masahiro Muraguchi
A 39-to-45-Gbit/s multi-data-rate clock and data recovery circuit with a robust lock detector.
IEEE J. Solid State Circuits
39 (8) (2004)
Kimikazu Sano
,
Koichi Murata
,
Suehiro Sugitani
,
Hirohiko Sugahara
,
Takatomo Enoki
50-Gb/s 4-b multiplexer/demultiplexer chip set using InP HEMTs.
IEEE J. Solid State Circuits
38 (9) (2003)
Hideyuki Nosaka
,
Kiyoshi Ishii
,
Takatomo Enoki
,
Tsugumichi Shibata
A 10-Gb/s data-pattern independent clock and data recovery circuit with a two-mode phase comparator.
IEEE J. Solid State Circuits
38 (2) (2003)
Kiyoshi Ishii
,
Hideyuki Nosaka
,
Hiroki Nakajima
,
Kenji Kurishima
,
Minoru Ida
,
Noriyuki Watanabe
,
Yasurou Yamane
,
Eiichi Sano
,
Takatomo Enoki
Low-power 1: 16 DEMUX and one-chip CDR with 1: 4 DEMUX using InP-InGaAs heterojunction bipolar transistors.
IEEE J. Solid State Circuits
37 (9) (2002)
Taiichi Otsuji
,
Koichi Murata
,
Takatomo Enoki
,
Yohtaro Umeda
An 80-Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMTs.
IEEE J. Solid State Circuits
33 (9) (1998)
Taiichi Otsuji
,
Yuhki Imai
,
Eiichi Sano
,
Shunji Kimura
,
Satoshi Yamaguchi
,
Mikio Yoneyama
,
Takatomo Enoki
,
Yohtaro Umeda
40-Gb/s ICs for future lightwave communications systems.
IEEE J. Solid State Circuits
32 (9) (1997)