Yoshino K. Fukai

Publication Activity (10 Years)

Years Active: 2002-2012
Publications (10 Years): 0

Top Topics

Evolutionary Algorithm

Bayesian Networks

Top Venues

IEICE Trans. Electron.

Publications

Kenji Kurishima, Minoru Ida, Norihide Kashio, Yoshino K. Fukai
-Type Doped Layer in the Emitter-Base Heterojunction Vicinity. IEICE Trans. Electron. (8) (2012)
Yoshino K. Fukai, Kenji Kurishima, Norihide Kashio, Minoru Ida, Shoji Yamahata, Takatomo Enoki
Emitter-metal-related degradation in InP-based HBTs operating at high current density and its suppression by refractory metal. Microelectron. Reliab. 49 (4) (2009)
Norihide Kashio, Kenji Kurishima, Yoshino K. Fukai, Shoji Yamahata
. IEICE Trans. Electron. (7) (2008)
Tetsuya Suemitsu, Yoshino K. Fukai, Masami Tokumitsu, Fabiana Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni
Improved stability in wide-recess InP HEMTs by means of a fully passivated two-step-recess gate. IEICE Electron. Express 3 (13) (2006)
Tetsuya Suemitsu, Yoshino K. Fukai, Hiroki Sugiyama, Kazuo Watanabe, Haruki Yokoyama
Bias-stress-induced increase in parasitic resistance of InP-based InAlAs/InGaAs HEMTs. Microelectron. Reliab. 42 (1) (2002)