Hideaki Matsuzaki

Publication Activity (10 Years)

Years Active: 1999-2022
Publications (10 Years): 15

Top Topics

Graceful Degradation

Top Venues

IEICE Electron. Express

Publications

Yuta Ueda, Yusuke Saito, Takahiko Shindo, Shigeru Kanazawa, Wataru Kobayashi, Hideaki Matsuzaki, Mitsuteru Ishikawa
Nanosecond-scale Hitless λ-switching of SOA-integrated Electro-optically Tunable RTF Laser with +/-2.5-GHz Dynamic Frequency Accuracy. OFC (2022)
Hiroshi Hamada, Takuya Tsutsumi, Hideaki Matsuzaki, Takuya Fujimura, Ibrahim Abdo, Atsushi Shirane, Kenichi Okada, Go Itami, Ho-Jin Song, Hiroki Sugiyama, Hideyuki Nosaka
300-GHz-Band 120-Gb/s Wireless Front-End Based on InP-HEMT PAs and Mixers. IEEE J. Solid State Circuits 55 (9) (2020)
Hiroshi Hamada, Takuya Tsutsumi, Adam Pander, Masahito Nakamura, Go Itami, Hideaki Matsuzaki, Hiroki Sugiyama, Hideyuki Nosaka
230-305 GHz, > 10-dBm-Output-Power Wideband Power Amplifier Using Low-Q Neutralization Technique in 60-nm InP-HEMT Technology. BCICTS (2020)
Yuta Shiratori, Takuya Hoshi, Hideaki Matsuzaki
Ultra-high Speed InP/GaAsSb-based Type-II Double-heterojunction Bipolar Transistors and Transfer Technology onto SiC Substrate. BCICTS (2020)
Yusuke Saito, Yuta Ueda, Takahiko Shindo, Shigeru Kanazawa, Hideaki Matsuzaki, Mitsuteru Ishikawa
Burst-Tolerant λ-Switching of Electro-Optically Tunable Reflection-type Transversal Filter Laser with Single Active Region. ECOC (2020)
Masahiro Nada, Fumito Nakajima, Shoko Tatsumi, Yuki Yamada, Yasuhiko Nakanishi, Toshihide Yoshimatsu, Kimikazu Sano, Hideaki Matsuzaki
Inverted p-down pin photodiode exceeding 70-GHz bandwidth featuring low operating bias voltage of 2 V. ECOC (2020)
Shigeru Kanazawa, Takahiko Shindo, Mingchen Chen, Naoki Fujiwara, Masahiro Nada, Toshihide Yoshimatsu, Atsushi Kanda, Yasuhiko Nakanishi, Fumito Nakajima, Kimikazu Sano, Yozo Ishikawa, Kazuyo Mizuno, Hideaki Matsuzaki
High Output Power and Compact LAN-WDM EADFB Laser TOSA for 4 × 100-Gbit/s/λ 40-km Fiber-Amplifier-Less Transmission. OFC (2020)
Hiroshi Hamada, Takuya Tsutsumi, Go Itami, Hiroki Sugiyama, Hideaki Matsuzaki, Kenichi Okada, Hideyuki Nosaka
300-GHz 120-Gb/s Wireless Transceiver with High-Output-Power and High-Gain Power Amplifier Based on 80-nm InP-HEMT Technology. BCICTS (2019)
Takuya Hoshi, Norihide Kashio, Yuta Shiratori, Kenji Kurishima, Minoru Ida, Hideaki Matsuzaki
and 5.4-V breakdown voltage. IEICE Electron. Express 16 (3) (2019)
Masahiro Nada, Toshihide Yoshimatsu, Yoshifumi Muramoto, Tetsuichiro Ohno, Fumito Nakajima, Hideaki Matsuzaki
106-Gbit/s PAM4 40-km Transmission Using an Avalanche Photodiode With 42-GHz Bandwidth. OFC (2018)
Toshihide Yoshimatsu, Masahiro Nada, Shigeru Kanazawa, Fumito Nakajima, Hideaki Matsuzaki, Kimikazu Sano
Dispersion tolerance of 100-Gbit/s PAM4 optical link utilizing high-speed avalanche photodiode receiver. IEICE Electron. Express 15 (16) (2018)
Koichi Hasebe, Wataru Kobayashi, Naoki Fujiwara, Takahiko Shindo, Toshihide Yoshimatsu, Shigeru Kanazawa, Tetsuichiro Ohno, Hiroaki Sanjoh, Yoshitaka Ohiso, Hiroyuki Ishii, Yoshiaki Sone, Hideaki Matsuzaki
28-Gbit/s 80-km transmission using SOA-assisted extended-reach EADFB laser (AXEL). OFC (2017)
Wataru Kobayashi, Naoki Fujiwara, Takahiko Shindo, Yoshitaka Ohiso, Shigeru Kanazawa, Hiroyuki Ishii, Koichi Hasebe, Hideaki Matsuzaki, Mikitaka Itoh
Advantages of SOA Assisted Extended Reach EADFB Laser (AXEL) for Operation at Low Power and with Extended Transmission Reach. IEICE Trans. Electron. (10) (2017)
Masahiro Nada, Takuya Hoshi, Shigeru Kanazawa, Toshikazu Hashimoto, Hideaki Matsuzaki
56-Gbit/s 40-km optical-amplifier-less transmission with NRZ format using high-speed avalanche photodiodes. OFC (2016)
Norihide Kashio, Takuya Hoshi, Kenji Kurishima, Minoru Ida, Hideaki Matsuzaki
and 5-V Breakdown Voltage. IEICE Trans. Electron. (5) (2016)
Masahiro Nada, Shigeru Kanazawa, Hiroshi Yamazaki, Yasuhiko Nakanishi, Wataru Kobayashi, Yoshiyuki Doi, Takaharu Ohyama, Tetsuichiro Ohno, Kiyoto Takahata, Toshikazu Hashimoto, Hideaki Matsuzaki
High-linearity avalanche photodiode for 40-km transmission with 28-Gbaud PAM4. OFC (2015)
Masahiro Nada, Yoshifumi Muramoto, Haruki Yokoyama, Toshihide Yoshimatsu, Hideaki Matsuzaki
High-speed avalanche photodiodes for 100-Gb/s systems and beyond. ECOC (2014)
Koji Inafune, Eiichi Sano, Hideaki Matsuzaki, Toshihiko Kosugi, Takatomo Enoki
W-Band Active Integrated Antenna Oscillator Based on Full-Wave Design Methodology and 0.1-µm Gate InP-Based HEMTs. IEICE Trans. Electron. (7) (2006)
Hideaki Matsuzaki, Takashi Maruyama, Takatomo Enoki, Masami Tokumitsu
Novel Fabrication Technology for High Yield Sub-100-nm-Gate InP-Based HEMTs. IEICE Trans. Electron. (7) (2006)
Hideaki Matsuzaki, Hiroki Sugiyama, Haruki Yokoyama, Takashi Kobayashi, Takatomo Enoki
Suppression of short-channel effect in pseudomorphic In0.25Al0.75P/In0.75Ga0.25As high electron mobility transistors. IEICE Electron. Express 1 (11) (2004)
Hideaki Matsuzaki, Kimikazu Sano, Takatomo Enoki
Low-power and High-speed SCFL-inverter Using Pseudomorphic InGaAs Channel High Electron Mobility Transistors. IEICE Electron. Express 1 (2) (2004)
Masafumi Yamamoto, Hideaki Matsuzaki, Toshihiro Itoh, Takao Waho, T. Akeyoshi, J. Osaka
Ultrahigh-Speed Circuits Using Resonant Tunneling Devices. Great Lakes Symposium on VLSI (1999)
Hideaki Matsuzaki, Toshihiro Itoh, Masafumi Yamamoto
A Novel High-Speed Flip-Flop Circuit Using RTDs and HEMTs. Great Lakes Symposium on VLSI (1999)