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Ultra-high Speed InP/GaAsSb-based Type-II Double-heterojunction Bipolar Transistors and Transfer Technology onto SiC Substrate.
Yuta Shiratori
Takuya Hoshi
Hideaki Matsuzaki
Published in:
BCICTS (2020)
Keyphrases
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high speed
type ii
low power
high density
cmos technology
type i error
rapid development
real time
positive and negative
cost effective
field effect transistors
knowledge transfer
computer systems
data processing
case study
power consumption
high speed networks
semiconductor devices