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Gate oxide breakdown in FET devices and circuits: From nanoscale physics to system-level reliability.
Ben Kaczer
Robin Degraeve
Philippe Roussel
Guido Groeseneken
Published in:
Microelectron. Reliab. (2007)
Keyphrases
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field effect transistors
leakage current
high density
mobile devices
steady state
multiple input
higher level
highly reliable
computer science
analog circuits
chip design
artificial intelligence
real time
cmos technology
high speed
low voltage
analog vlsi