Login / Signup

Influence of gate length on ESD-performance for deep submicron CMOS technology.

Karlheinz BockBart KeppensVincent De HeynGuido GroesenekenL. Y. ChingA. Naem
Published in: Microelectron. Reliab. (2001)
Keyphrases
  • cmos technology
  • low power
  • mixed signal
  • power consumption
  • vlsi circuits
  • low voltage
  • spl times
  • low cost
  • high speed
  • parallel processing
  • power dissipation
  • image sensor
  • computer vision
  • three dimensional
  • electron beam