Yuichiro Mitani

Publication Activity (10 Years)

Years Active: 2012-2020
Publications (10 Years): 5

Top Topics

Cmos Technology

Gate Dielectrics

Electrical Properties

Selection Mechanism

Top Venues

Microelectron. Reliab.

Publications

Harumi Seki, Yasushi Nakasaki, Yuichiro Mitani
Further Investigation on Mechanism of Trap Level Modulation in Silicon Nitride Films by Fluorine Incorporation. IRPS (2020)
Yuichiro Mitani, Yusuke Higashi, Yasushi Nakasaki
Study on mechanism of thermal curing in ultra-thin gate dielectrics. IRPS (2018)
Yusuke Higashi, Riichiro Takaishi, Koichi Kato, Masamichi Suzuki, Yasushi Nakasaki, Mitsuhiro Tomita, Yuichiro Mitani, Masuaki Matsumoto, Shohei Ogura, Katsuyuki Fukutani, Kikuo Yamabe
Mechanism of gate dielectric degradation by hydrogen migration from the cathode interface. Microelectron. Reliab. 70 (2017)
Takao Marukame, Kodai Ueyoshi, Tetsuya Asai, Masato Motomura, Alexandre Schmid, Masamichi Suzuki, Yusuke Higashi, Yuichiro Mitani
Error Tolerance Analysis of Deep Learning Hardware Using a Restricted Boltzmann Machine Toward Low-Power Memory Implementation. IEEE Trans. Circuits Syst. II Express Briefs (4) (2017)
Tetsufumi Tanamoto, Satoshi Takaya, Nobuaki Sakamoto, Hirotsugu Kasho, Shinichi Yasuda, Takao Marukame, Shinobu Fujita, Yuichiro Mitani
Physically unclonable function using initial waveform of ring oscillators on 65 nm CMOS technology. CoRR (2017)
Yuichiro Mitani, Kazuya Matsuzawa
Simple technique for prediction of breakdown voltage of ultrathin gate insulator under ESD testing. ICICDT (2015)
Izumi Hirano, Yasushi Nakasaki, Shigeto Fukatsu, Masakazu Goto, Koji Nagatomo, Seiji Inumiya, Katsuyuki Sekine, Yuichiro Mitani, Kikuo Yamabe
Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing. Microelectron. Reliab. 53 (12) (2013)
Masamichi Suzuki, Atsuhiro Kinoshita, Yuichiro Mitani
Improvement of gate disturb degradation in SONOS FETs for Vth mismatch compensation in CMOS analog circuits. ICICDT (2013)
Yuichiro Mitani, Shigeto Fukatsu, Daisuke Hagishima, Kazuya Matsuzawa
Lifetime prediction of channel hot carrier degradation in pMOSFETs separating NBTI component. ICICDT (2012)