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Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing.

Izumi HiranoYasushi NakasakiShigeto FukatsuMasakazu GotoKoji NagatomoSeiji InumiyaKatsuyuki SekineYuichiro MitaniKikuo Yamabe
Published in: Microelectron. Reliab. (2013)
Keyphrases
  • gate dielectrics
  • electrical properties
  • uniformly distributed
  • random variables
  • spatial distribution
  • probability distribution
  • data sets
  • control system
  • steady state
  • data distribution