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Mechanism of gate dielectric degradation by hydrogen migration from the cathode interface.

Yusuke HigashiRiichiro TakaishiKoichi KatoMasamichi SuzukiYasushi NakasakiMitsuhiro TomitaYuichiro MitaniMasuaki MatsumotoShohei OguraKatsuyuki FukutaniKikuo Yamabe
Published in: Microelectron. Reliab. (2017)
Keyphrases
  • steady state
  • learning algorithm
  • user interface
  • selection mechanism
  • friendly interface
  • chemical vapor deposition
  • silicon dioxide
  • gate dielectrics
  • real time
  • website
  • evolutionary algorithm
  • nano scale